P2060ZT Datasheet PDF - NIKO-SEM

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P2060ZT
NIKO-SEM

Part Number P2060ZT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ
ID
20A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
20
12
59
4
320
48
19
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
1
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
600
VDS = VGS, ID = 250A
2 3.1 4
VDS = 0V, VGS = ±30V
±100
VDS = 600V, VGS = 0V , TC = 25 °C
1
VDS = 480V, VGS = 0V , TC = 100 °C
100
V
nA
A
REV 1.0
1
F-27-3



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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
DYNAMIC
160 190
15
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1728
1096
Reverse Transfer Capacitance
Crss
25
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 50V, ID =10A, VGS = 10V
VDD = 300V, ID =10A, RG= 6Ω
60
10
29
56
38
112
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF =10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 10A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
395
4.3
20
1.5
mΩ
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-27-3



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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
Output Characteristics
20
VGS=10V
VGS=9V
VGS=8V
16 VGS=7V
VGS=6V
VGS=5.5V
12
8 VGS=5V
4
0
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
1
0.8
0.6
0.4
0.2
0
2
ID=20A
4 6 8 10
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
VGS=10V
0.5 ID=10A
0.0
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Transfer Characteristics
20
16
12
8
25
4
125
-20
0
0123456
VGS, Gate-To-Source Voltage(V)
7
On-Resistance VS Drain Current
0.5
0.4
0.3
0.2
VGS=10V
0.1
0
0 4 8 12 16
ID , Drain-To-Source Current(A)
20
Capacitance Characteristic
10000
1000
CISS
COSS
100
CRSS
10
1
0 120 240 360 480 600
VDS, Drain-To-Source Voltage(V)
REV 1.0
3
F-27-3



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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
Gate charge Characteristics
10
VDS=480V
8 ID=10A
6
Source-Drain Diode Forward Voltage
100
10
4
150
1
25
2
0
0 13 26 39 52 65
Qg , Total Gate Charge(nC)
Safe Operating Area
100
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
Single Pulse Maximum Power Dissipation
1500
1200
Single Pulse
RθJC = 1˚C/W
TC=25˚C
10
900
1
0.1
1
Operation in This
Area is Limited
by RDS(ON)
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
10 100 1000
VDS, Drain-To-Source Voltage(V)
600
300
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Notes
0.1
single pulse
1.Duty cycle, D= t1 / t2
2.RthJC = 1 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
REV 1.0
4
F-27-3



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