P2060ZT Datasheet PDF - NIKO-SEM

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P2060ZT
NIKO-SEM

Part Number P2060ZT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ
ID
20A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
20
12
59
4
320
48
19
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
1
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
600
VDS = VGS, ID = 250A
2 3.1 4
VDS = 0V, VGS = ±30V
±100
VDS = 600V, VGS = 0V , TC = 25 °C
1
VDS = 480V, VGS = 0V , TC = 100 °C
100
V
nA
A
REV 1.0
1
F-27-3

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