P1820BD Datasheet PDF - UNIKC

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P1820BD
UNIKC

Part Number P1820BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1820BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
18
11.4
30
Avalanche Current
IAS 18
Avalanche Energy
L = 1mH EAS 162
Power Dissipation
TC= 25 °C
TC= 100°C
PD
104
41
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
1.2
UNITS
°C / W
REV 1.0
1 2014-3-27

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