P1820AD Datasheet PDF - NIKO-SEM

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P1820AD
NIKO-SEM

Part Number P1820AD
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1820AD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ
ID
18A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 1.2mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
200
±30
18
11
29
18
194
104
41
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
1.2
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
200
V
23 4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 200V, VGS = 0V
IDSS
VDS = 160V, VGS = 0V, TJ = 125 °C
1
A
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 9A
VDS = 10V, ID = 9A
130 160 mΩ
17 S
REV 1.0
1
D-33-5



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1820AD
TO-252
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
1370
147
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V, VGS = 10V,
ID = 18A
VDS = 100V, ID 18A,
VGS = 10V ,RG = 25Ω
29
45
7.2
21
30
260
270
210
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 18A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 18A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
183
1.2
18
1.6
pF
nC
nS
A
V
nS
uC
REV 1.0
2
D-33-5



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1820AD
TO-252
Halogen-Free & Lead-Free
Output Characteristics
20
VGS=10V
VGS=9V
VGS=8V
16 VGS=7V
VGS=6V
Transfer Characteristics
20
16
12
VGS=5V
8
4
0
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
1234
VDS, Drain-To-Source Voltage(V)
5
On-Resistance VS Temperature
VGS=10V
ID=9A
-25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
Characteristics
VDS=160V
8 ID =18A
6
12
8
4
0
0
2500
25
125
-20
1234567
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2000
1500
1000
CISS
500
COSS
CRSS
0
0 5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
150
25℃
4
1
2
0
0 9 18 27 36 45
Qg , Total Gate Charge(nC)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-To-Drain Voltage(V)
REV 1.0
3
D-33-5



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1820AD
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
1ms
1
0.1
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1.2 ˚C/W
4.Single Pulse
10
10ms
100ms
DC
100 1000
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
1000
SINGLE PULSE
800 RθJC = 1.2 ˚C/W
TC=25˚C
600
400
200
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Transient Thermal Response Curve
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
T1 , Square Wave Pulse Duration[sec]
Nootteess
1.Duty cycle, D= t1 / t2
2.RthJC = 1.2 /W
13..TDJu-TtyC=cPyc*Rleth, JDC=(t)t1 / t2
24..RRtthhJJCC(t)== r1(t.)2*Rth/JWC
1
10
REV 1.0
4
D-33-5



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