P1615ATA Datasheet PDF - NIKO-SEM

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P1615ATA
NIKO-SEM

Part Number P1615ATA
Description N-Channel Field Effect Transistor
Page 4 Pages


P1615ATA datasheet pdf
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NIKO-SEM
N-Channel Enhancement Mode
P1615ATA
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
16.5mΩ
ID
68A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
150
±25
68
43
270
30
435
192
77
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
0.65
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
150
2.5 3.5 4.5
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125 °C
1
A
10
REV1.0
G-32-2
1



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NIKO-SEM
N-Channel Enhancement Mode
P1615ATA
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
14 18.5
mΩ
13 16.5
34 S
Input Capacitance
Ciss
3452
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
530
Reverse Transfer Capacitance
Crss
209
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10V , VDS = 75V , ID = 20A
VDS = 75V
ID 20A, VGS = 10V, RGEN =6Ω
1.4
80
17
28
23
56
55
67
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
80
225
68
1.2
pF
Ω
nC
nS
A
V
nS
nC
REV1.0
G-32-2
2



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NIKO-SEM
N-Channel Enhancement Mode
P1615ATA
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
70
VGS=10V
VGS=9V
VGS=8V
56 VGS=7V
VGS=6V
Transfer Characteristics
70
56
42 42
28
VGS=5V
14
VGS=4.5V
0
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
0.5 VGS=10V
ID=20A
0.0
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10
Characteristics
VDS=75V
ID=20A
8
6
28 25
125
-20
14
0
0 2 4 6 8 10
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
4500
4000
3500
3000
CISS
2500
2000
1500
1000
500
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
150
25
1
2
0
0
REV1.0
20 40 60
Qg , Total Gate Charge(nC)
80
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
G-32-2
3



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NIKO-SEM
N-Channel Enhancement Mode
P1615ATA
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
On-Resistance VS Gate-To-Source
0.2
Voltage
On-Resistance VS Drain Current
0.04
0.16
0.032
0.12
0.024
0.08
0.04
0
2
ID=20A
4 6 8 10
-VGS, Gate-To-Source Voltage(V)
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
100
0.016
0.008
VGS=4.5V
VGS=10V
0
0 6 12 18
-ID , Drain-To-Source Current
24
Single Pulse Maximum Power Dissipation
2500
2000
Single Pulse
RθJC = 0.65˚C/W
TC=25˚C
10
NOTE :
1 1.VGS= 10V
2.TC=25˚C
3.RθJC = 0.65˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
0.1
1
10 100
VDS, Drain-To-Source Voltage(V)
1500
1000
500
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
1 0.01
100
0.1
single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 0.65 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
REV1.0
G-32-2
4



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