P1610ATF Datasheet PDF - NIKO-SEM

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P1610ATF
NIKO-SEM

Part Number P1610ATF
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P1610ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID
34A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current
Avalanche Energy
Power Dissipation
TC = 25 °C
TC = 100 °C
L = 1mH
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
EAS
PD
Mounting Torque3
Machine Screw
Operating Junction & Storage Temperature Range
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
34
21
120
12
72
48
19
5
0.49
-55 to 150
UNITS
V
A
mJ
W
Kgf.cm
N.m
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Not suggest using Self-Tapping screw.
TYPICAL
MAXIMUM
2.6
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
REV 1.1
1
LIMITS
UNIT
MIN TYP MAX
110
2 3.2
4
V
±100 nA
F-46-1



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NIKO-SEM
N-Channel Enhancement Mode
P1610ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VDS = 88V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 7V, ID = 15A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
1
10
13.5 21
12.5 16
80
Input Capacitance
Ciss
3009
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
258
Reverse Transfer Capacitance
Crss
152
Gate Resistance
Rg VGS = 0V, VDS = 0V ,f = 1MHz
0.81
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 55V, VGS = 10V,
ID = 20A
Qgd
57
15.8
20
Turn-On Delay Time2
td(on)
47
Rise Time2
Turn-Off Delay Time2
Fall Time2
tr
td(off)
tf
VDD = 55V
ID 20A, VGS = 10V, RGEN = 6Ω
88
86
83
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A,VGS = 0V
36
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
37
50
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
F-46-1
2



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NIKO-SEM
N-Channel Enhancement Mode
P1610ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
60
VGS=10V
VGS=9V
VGS=8V
48 VGS=7V
VGS=6V
Transfer Characteristics
60
48
36 36
VGS=5V
24 24
12
VGS=4.5V
0
0123456
VDS, Drain-To-Source Voltage(V)
7
25
12
125
-20
0
01234567
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS=10V
0.4 ID=20A
0.2
0.0
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
VDS=55V
ID=20A
8
6
Capacitance Characteristic
4000
3500
3000
CISS
2500
2000
1500
1000
500
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
150
25
1
2
0
0 10 20 30 40 50 60
Qg , Total Gate Charge(nC)
0.1
0.0 0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.1
F-46-1
3



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NIKO-SEM
N-Channel Enhancement Mode
P1610ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
100
10
1ms
10ms
1 NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.6˚C/W
4.Single Pulse
100ms
DC
0.1
1
10 100
VDS, Drain-To-Source Voltage(V)
1000
Single Pulse Maximum Power Dissipation
500
450 Single Pulse
RθJC = 2.6˚C/W
400 TC=25˚C
350
300
250
200
150
100
50
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.1
0.1 0.05
0.02
0.01
single pulse
0.2
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 2.6 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
REV 1.1
F-46-1
4



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