P1610AD Datasheet PDF - UNIKC

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P1610AD
UNIKC

Part Number P1610AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1610AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ @VGS = 10V
ID
45A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 110
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
45
28
80
Avalanche Current
IAS 13.7
Avalanche Energy2
EAS 93
Power Dissipation
TC= 25 °C
TC= 100°C
PD
83
33
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=1mH,VDD=50V
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.5 °C / W
REV 1.0
1 2014/7/25



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P1610AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS =80V, VGS = 0V, TJ = 125°C
110
2 3.5
4
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID =15A
VGS =10V, ID =20A
14 21
13 16
Forward Transconductance1
gfs
VDS =10V, ID = 20A
63 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS = 55V, VGS = 10V,
ID = 20A
VDD = 55V ,ID20A,
VGS = 10V, RGS =6Ω
3017
255
152
58
16.5
21.5
33
90
77
55
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
45 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
37 nS
48 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014/7/25



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P1610AD
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2014/7/25



No Preview Available !

P1610AD
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2014/7/25



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