P1610AD Datasheet PDF - UNIKC

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P1610AD
UNIKC

Part Number P1610AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1610AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ @VGS = 10V
ID
45A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 110
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
45
28
80
Avalanche Current
IAS 13.7
Avalanche Energy2
EAS 93
Power Dissipation
TC= 25 °C
TC= 100°C
PD
83
33
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=1mH,VDD=50V
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.5 °C / W
REV 1.0
1 2014/7/25

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