P1606BT Datasheet PDF - NIKO-SEM

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P1606BT
NIKO-SEM

Part Number P1606BT
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Logic Level Enhancement
P1606BT
Mode Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 18.5mΩ
ID
42A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
42
26
110
42
88
62.5
25
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
2
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
60
1 1.5
3
V
±100 nA
1
A
10
110 A
REV 0.91
1 C-17-4



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NIKO-SEM
N-Channel Logic Level Enhancement
P1606BT
Mode Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
17 21 mΩ
13 18.5 mΩ
45 S
Input Capacitance
Ciss
2710
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
178
Reverse Transfer Capacitance
Crss
136
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V ,f = 1MHz
VDS =30V, VGS = 10V,
ID = 20A
VDD = 30V
ID 20A, VGS = 10V, RGEN = 6Ω
2
55
9.9
12.5
20
70
50
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A,VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
32
35
42
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 0.91
2 C-17-4



No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement
P1606BT
Mode Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
REV 0.91
3 C-17-4



No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement
P1606BT
Mode Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
REV 0.91
4 C-17-4



P1606BT datasheet pdf
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P1606BT pdf
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