P1606BD Datasheet PDF - UNIKC

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P1606BD
UNIKC

Part Number P1606BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1606BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 18.5mΩ @VGS = 10V
ID
42A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
42
26
110
Avalanche Current
IAS 41
Avalanche Energy
L = 0.1mH
EAS
85
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62
25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
2 °C / W
75 °C / W
Ver 1.1
1 2013-3-20



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P1606BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1 1.5 3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
On-State Drain Current1
Forward Transconductance1
RDS(ON)
ID(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V,VGS = 10V
VDS = 10V, ID = 20A
17 21
13 18.5
110
45
DYNAMIC
Input Capacitance
Ciss
2710
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
178
Reverse Transfer Capacitance
Crss
136
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0V,VGS = 0V ,f=1MHz
VDS = 30V, ID = 20A, VGS = 10V
VDD = 30V, ID @ 20A,
VGS = 10V , RGEN =6Ω
2
55
9.9
12.5
31
99
75
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
42
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
32
35
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-20



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P1606BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-20



No Preview Available !

P1606BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
4 2013-3-20



P1606BD datasheet pdf
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P1606BD pdf
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