P15NK50ZFP Datasheet PDF - STMicroelectronics

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P15NK50ZFP
STMicroelectronics

Part Number P15NK50ZFP
Description STP15NK50ZFP
Page 14 Pages


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STP15NK50Z/FP, STB15NK50Z
STB15NK50Z-1, STW15NK50Z
N-CHANNEL500V-0.30-14ATO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP15NK50Z
STP15NK50ZFP
STB15NK50Z
STB15NK50Z-1
STW15NK50Z
500 V
500 V
500 V
500 V
500 V
< 0.34
< 0.34
< 0.34
< 0.34
< 0.34
14 A
14 A
14 A
14 A
14 A
160 W
40 W
160 W
160 W
160 W
s TYPICAL RDS(on) = 0.30
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
123
I2PAK
3
2
1
TO-220FP
3
2
1
TO-247
3
1
D2PAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE
MARKING
STP15NK50Z
P15NK50Z
STP15NK50ZFP
P15NK50ZFP
STB15NK50ZT4
B15NK50Z
STB15NK50Z
B15NK60Z
STB15NK50Z-1
STW15NK50Z
B15NK50Z
W15NK50Z
PACKAGE
TO-220
TO-220FP
D2PAK
D2PAK
I2PAK
TO-247
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
(ONLY UNDER REQUEST)
TUBE
TUBE
August 2002
1/14



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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (DC)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 14A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
STP15NK50Z
STB15NK50Z
STB15NK50Z-1
14
8.8
56
160
1.28
-
Value
STP15NK50ZFP STW15NK50Z
500
500
± 30
14 (*)
8.8 (*)
56 (*)
40
0.32
± 20
4000
4.5
2500
-55 to 150
-55 to 150
14
8.8
56
160
1.28
-
Unit
V
V
V
A
A
A
W
W/°C
mA
V
V/ns
V
°C
°C
THERMAL DATA
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case Thermal Resistance Junction-case Max
0.78 3.1 0.78 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (#)
60
°C/W
Rthj-amb Thermal Resistance Junction-ambient Max
62.5 50 °C/W
Tl Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
14
300
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100µA
3 3.75 4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 7 A
0.30 0.34
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 7 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
Test Conditions
VDD = 250 V, ID = 7 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 14 A,
VGS = 10V
Min.
Typ.
12
2260
264
64
150
Typ.
20
23
76
15
40
Max.
Max.
106
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 250 V, ID = 7 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 14 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
62
15
13
11
28
Max.
Unit
V
µA
µA
µA
V
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
14 A
56 A
VSD (1) Forward On Voltage
ISD = 14 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 14 A, di/dt = 100A/µs
VDD = 29V, Tj = 150°C
(see test circuit, Figure 5)
428 ns
4.2 µC
20 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/14



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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
Thermal Impedance For TO-247
4/14



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