P1510ATG Datasheet PDF - UNIKC

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P1510ATG
UNIKC

Part Number P1510ATG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1510ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
15mΩ @VGS = 10V
ID
64A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
64
45
200
Avalanche Current
IAS 67
Avalanche Energy
L = 0.1 mH
EAS
224
Power Dissipation
TC= 25 °C
TC= 100°C
PD
150
75
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 175
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1
62.5
UNITS
°C / W
REV 1.0
1 2014-3-12

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