P1510ATG Datasheet PDF - UNIKC

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P1510ATG
UNIKC

Part Number P1510ATG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1510ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
15mΩ @VGS = 10V
ID
64A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
64
45
200
Avalanche Current
IAS 67
Avalanche Energy
L = 0.1 mH
EAS
224
Power Dissipation
TC= 25 °C
TC= 100°C
PD
150
75
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 175
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1
62.5
UNITS
°C / W
REV 1.0
1 2014-3-12



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P1510ATG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =80V, VGS = 0V
VDS =80V, VGS = 0V, TJ = 125°C
100
V
234
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS =10V, ID = 30A
13 15
Forward Transconductance1
gfs
VDS =5V, ID = 30A
43 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS =50V, VGS = 10V,
ID = 20A
VDD = 50V
ID @ 30A, VGS= 10V, RGEN =6Ω
7100
420
298
3.2
131
45
34
20
110
85
183
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 30A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V,, dlS/dt = 100A / μS
89
306
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
64
1.4
A
V
nS
nC
REV 1.0
2 2014-3-12



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P1510ATG
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2014-3-12



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P1510ATG
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2014-3-12



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