P1350AT Datasheet PDF - UNIKC

www.Datasheet-PDF.com

P1350AT
UNIKC

Part Number P1350AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


P1350AT datasheet pdf
Download PDF
P1350AT pdf
View PDF for Mobile

No Preview Available !

P1350AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.52Ω @VGS = 10V
ID
13A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
13
10
45
8.8
387
Power DissipationA
TC = 25 °C
TC = 100 °C
PD
192
77
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.65
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



No Preview Available !

P1350AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 500V, VGS = 0V, TC = 25 °C
VDS = 500V, VGS = 0V , TC = 100 °C
500
2.5
4.5
±100
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 6.5A
0.4 0.52
Forward Transconductance1
gfs
VDS = 40V, ID = 6.5A
8.5
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 250V, VGS = 10V, ID = 6A
VDD = 250V, ID = 6A, RG = 4.7Ω
2185
204
59
40
11.5
12.5
30
25
43
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 12A , dlF/dt = 100A / μS, VGS = 0V
320
4.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
10
1.7
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



No Preview Available !

P1350AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16



No Preview Available !

P1350AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/16



P1350AT datasheet pdf
Download PDF
P1350AT pdf
View PDF for Mobile


Related : Start with P1350A Part Numbers by
P1350AT N-Channel Enhancement Mode MOSFET P1350AT
UNIKC
P1350AT pdf
P1350ATF N-Channel Enhancement Mode MOSFET P1350ATF
UNIKC
P1350ATF pdf
P1350ATFS N-Channel Enhancement Mode MOSFET P1350ATFS
UNIKC
P1350ATFS pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact