P1308ATG Datasheet PDF - UNIKC

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P1308ATG
UNIKC

Part Number P1308ATG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1308ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 13mΩ @VGS = 10V
ID
62A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
62
39
200
53
Avalanche Energy
L = 0.1 mH
EAS
140
Power Dissipation
TC= 25 °C
TC= 100°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
96
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.0
1 2014-3-12



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P1308ATG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
ID(ON)
RDS(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =60V, VGS = 0V
VDS =60V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
VGS =10V, ID = 40A
75
1.5 2.3
4
V
±250 nA
1
mA
10
200 A
9.5 13
Forward Transconductance1
gfs
VDS =10V, ID = 40A
33 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS =40V, VGS = 10V,
ID = 40A
VDD = 40V
ID @ 40A, VGS= 10V, RGS =25Ω
3370
279
276
79
17.2
33
43
212
293
147
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
62 A
Forward Voltage1
VSD IF = 40A, VGS = 0V
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 40A, dlF/dt = 100A / μS
45 nS
70 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014-3-12



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P1308ATG
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2014-3-12



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P1308ATG
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2014-3-12



P1308ATG datasheet pdf
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P1308ATG pdf
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