P1308ATG Datasheet PDF - UNIKC

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P1308ATG
UNIKC

Part Number P1308ATG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1308ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 13mΩ @VGS = 10V
ID
62A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
62
39
200
53
Avalanche Energy
L = 0.1 mH
EAS
140
Power Dissipation
TC= 25 °C
TC= 100°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
96
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.0
1 2014-3-12

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