P1308ATG Datasheet PDF - NIKO-SEM

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P1308ATG
NIKO-SEM

Part Number P1308ATG
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P1308ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 13mΩ
ID
62A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
±20
62
39
200
53
140
96
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 40A
VDS = 10V, ID = 40A
LIMITS
UNIT
MIN TYP MAX
75
1.5 2.3
4.0
V
±250 nA
1
µA
10
200 A
9.5 13 mΩ
33 S
Ver1.1
July-05-2011
1



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NIKO-SEM
N-Channel Enhancement Mode
P1308ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
3370
279
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =40V, VGS = 10V,
ID = 40A
VDD = 40V,
ID 40A, VGS = 10V, RGS = 25Ω
276
79
17.2
33
43
212
293
147
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 40A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 40A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
45
70
62
1.4
pF
nC
nS
A
V
nS
nC
Ver1.1
July-05-2011
2



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NIKO-SEM
N-Channel Enhancement Mode
P1308ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
50
VGS=10V
VGS=9V
VGS=8V
40 VGS=7V
VGS=6V
VGS=5V
Transfer Characteristics
50
40
30
VGS=4.5V
20
10
0
0
2.0
1234
VDS, Drain-To-Source Voltage(V)
5
On-Resistance VS Temperature
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=40A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 Characteristics
ID=40A
8 VDS=40V
30
20
25
10
125
-20
0
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
1234567
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
CISS
CRSS
COSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
6 10
150
4 25
1
2
0
0 16 32 48 64
Qg , Total Gate Charge(nC)
80
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
Ver1.1
July-05-2011
3



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NIKO-SEM
N-Channel Enhancement Mode
P1308ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
100
10 1ms
10ms
100ms
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1.3 ˚C/W
4.Single Pulse
0.1
1
10
DC
100
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
1000
800 Single Pulse
RθJC = 1.3 ˚C/W
TC=25˚C
600
400
200
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 1.3 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
Ver1.1
July-05-2011
4



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