P1212AT Datasheet PDF - UNIKC

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P1212AT
UNIKC

Part Number P1212AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1212AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
120V
12mΩ @VGS = 10V
ID
75A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
47
300
Avalanche Current
IAS 55
Avalanche Energy
L = 0.5mH
EAS
765
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
128
51
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
0.97
62.5
UNITS
°C / W
REV 1.0
1 2014/5/13

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P1212AT N-Channel Enhancement Mode MOSFET P1212AT
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