P1160ZTFS Datasheet PDF - NIKO-SEM

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P1160ZTFS
NIKO-SEM

Part Number P1160ZTFS
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P1160ZTF:TO-220F
P1160ZTFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
390mΩ
ID
11A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
11
7
40
3
180
39
15
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
3.2
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
600
2
3.2 4
V
±100 nA
1
A
100
REV 1.0 1 E-42-1



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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P1160ZTF:TO-220F
P1160ZTFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
DYNAMIC
347 390 mΩ
8S
Input Capacitance
Ciss
870
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss
Crss
Co(er)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0 to 480V
VDD = 480V, ID =5.5A, VGS = 10V
VDD = 300V, ID =5.5A, RG= 10Ω
665
pF
8
79
30
5 nC
15
27
65
nS
73
37
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =5.5A, VGS = 0V
11 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =5.5A, dlF/dt = 100A / S
Qrr
302 nS
3.6 uC
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0 2 E-42-1



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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P1160ZTF:TO-220F
P1160ZTFS:TO-220FS
Halogen-Free & Lead-Free
Output Characteristics
12
VGS=10V
VGS=9V
10
VGS=8V
VGS=7V
VGS=6V
8
6
4
VGS=5V
2
0
0123456
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10 Characteristics
VDS=480V
ID=5.5A
8
7
6
4
2
0
0 6 12 18 24 30
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
0.8Voltage
0.6
0.4
0.2
ID=5.5A
0
2 4 6 8 10
VGS, Gate-To-Source Voltage(V)
Transfer Characteristics
12
10
8
6
25
4 125
2
0
0123456
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
10000
7
1000
CISS
100
COSS
10
CRSS
1
0 100 200 300 400 500 600
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Drain Current
0.5
0.4
VGS=10V
0.3
0.2
0.1
0
0369
ID , Drain-To-Source Current(A)
12
REV 1.0 3 E-42-1



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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P1160ZTF:TO-220F
P1160ZTFS:TO-220FS
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.9
Source-Drain Diode Forward Voltage
100
2.4
10
1.9
1.4
150
25
1
0.9
VGS=10V
ID=5.5A
0.4
-50
-25
0
25 50 75 100
TJ , Junction Temperature(˚C)
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
125
150
1
NOTE :
0.1 1.VGS= 10V
2.TC=25˚C
3.RθJC = 3.2˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
0.01
1
10 100 1000
VDS, Drain-To-Source Voltage(V)
10000
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
800
700 Single Pulse
RθJC = 3.2˚C/W
TC=25˚C
600
500
400
300
200
100
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
1 0.01
0.1
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 3.2 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV 1.0 4 E-42-1



P1160ZTFS datasheet pdf
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P1160ZTFS pdf
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