P1065AT Datasheet PDF - UNIKC

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P1065AT
UNIKC

Part Number P1065AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1065AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
0.75Ω @VGS = 10V
ID
10A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
EAS
10
5
30
125
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
113
45
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.1 °C / W
Ver 1.0
1 2012/4/16



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P1065AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
Drain-Source On-State
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V, TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
650
2.5
3.5 4.5
±100
25
250
0.6 0.75
9.3
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS = 520V, VGS = 10V, ID = 10A
VDD = 325V, ID = 10A, RG = 25Ω
2370
137
4
43
12.3
13.4
20
50
100
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A , dlF/dt = 100A / μS
355
2.6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
10
1.4
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
μC
Ver 1.0
2 2012/4/16



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P1065AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16



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P1065AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/16



P1065AT datasheet pdf
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P1065AT pdf
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