P1065AT Datasheet PDF - UNIKC

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P1065AT
UNIKC

Part Number P1065AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1065AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
0.75Ω @VGS = 10V
ID
10A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
EAS
10
5
30
125
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
113
45
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.1 °C / W
Ver 1.0
1 2012/4/16

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