P1060AT Datasheet PDF - UNIKC

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P1060AT
UNIKC

Part Number P1060AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1060AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω @VGS = 10V
ID
10A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
10
6
40
6.8
236
Power DissipationA
TC = 25 °C
TC = 100 °C
PD
156
63
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 60V, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.8
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



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P1060AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 600V, VGS = 0V , TC = 100 °C
600
2.5
4.5
±250
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 5A
0.6 0.75
Forward Transconductance1
gfs
VDS = 10V, ID = 5A
9.4
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 300V, VGS = 10V, ID = 10A
VDD = 300V, ID = 10A, RG = 25Ω
2120
240
38
37
10
11.7
55
30
210
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A , dlF/dt = 100A / μS, VGS = 0V
490
4.2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
10
1.5
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



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P1060AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16



No Preview Available !

P1060AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/16



P1060AT datasheet pdf
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P1060AT pdf
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