P1060AT Datasheet PDF - UNIKC

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P1060AT
UNIKC

Part Number P1060AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P1060AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω @VGS = 10V
ID
10A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
10
6
40
6.8
236
Power DissipationA
TC = 25 °C
TC = 100 °C
PD
156
63
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 60V, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.8
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16

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