P1006BTF Datasheet PDF - NIKO-SEM

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P1006BTF
NIKO-SEM

Part Number P1006BTF
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P1006BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ
ID
47A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
60
±20
47
29
150
38
72.7
48
19
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
2.6
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 20A
VGS =10V, ID = 20A
60
1.3
1.8 2.3
±100
1
10
8.2 13
7 10
V
nA
A
mΩ
REV 1.0
1
D-41-3



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NIKO-SEM
N-Channel Enhancement Mode
P1006BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 20A
DYNAMIC
60
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1836
224
136
0.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , ID =20A
VDS = 30V , ID 20A,
VGS = 10V, RGEN =6Ω
41
22
5.5
11.6
31
32
52
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF= 20A, dI/dt=100A/μs
34
36
47
1.3
S
pF
Ω
nC
nS
A
V
nS
uC
REV 1.0
2
D-41-3



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NIKO-SEM
N-Channel Enhancement Mode
P1006BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=10V
VGS=9V
VGS=8V
32 VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
24
VGS=3.5V
VGS=3V
16
8
0
01234
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=20A
0.4
-50
-25 0 25 50 75 100
TJ , Junction Temperature(˚C)
125
Gate charge Characteristics
10 Characteristics
VDS=30V
ID=20A
8
5
150
6
Transfer Characteristics
40
32
24
-20
16
25
8
125
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2500
5
2000
1500
CISS
1000
500
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
150
25
10
4
1
2
0
0 8 16 24 32
Qg , Total Gate Charge(nC)
40
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.0
3
D-41-3



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NIKO-SEM
N-Channel Enhancement Mode
P1006BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
100
Single Pulse Maximum Power Dissipation
400
350
Single Pulse
RθJC = 2.6˚C/W
TC=25˚C
300
10
1
0.1
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.6˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
10 100
VDS, Drain-To-Source Voltage(V)
250
200
150
100
50
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 2.6 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV 1.0
4
D-41-3



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