P1006BT Datasheet PDF - NIKO-SEM

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P1006BT
NIKO-SEM

Part Number P1006BT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ
ID
61A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
60
±20
61
39
150
39
77
83
33
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
1.5
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 20A
VGS =10V, ID = 20A
60
1.3
1.7 2.3
±100
1
10
8.2 13
6.8 10
V
nA
A
mΩ
REV 1.0
1
D-45-3



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NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 20A
DYNAMIC
60
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1853
224
142
0.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , ID =20A
VDS = 30V , ID 20A,
VGS = 10V, RGEN =6Ω
42.2
23.1
5.6
12.8
30
29
50
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Package limitation current is 30A
IF= 20A, dI/dt=100A/μs
29
27
61
1.3
S
pF
Ω
nC
nS
A
V
nS
uC
REV 1.0
2
D-45-3



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NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=10V
VGS=8V
VGS=7V
32 VGS=5V
VGS=4.5V
VGS=3.5V
VGS=3V
24
16
8
0
01234
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=20A
0.4
-50 -25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 Characteristics
5
150
VDS=30V
8 ID=20A
6
Transfer Characteristics
40
32
24
-20
16
25
8
125
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2500
5
2000
1500
CISS
1000
500
COSS
CRSS
0
0 5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
150
10
4
25
1
2
0
0 9 18 27 36
Qg , Total Gate Charge(nC)
45
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.0
3
D-45-3



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NIKO-SEM
N-Channel Enhancement Mode
P1006BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
100
10
1
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1.5˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
10 100
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
900
800
Single Pulse
RθJC = 1.5˚C/W
700 TC=25˚C
600
500
400
300
200
100
0
0.001
0.01
0.1
1
10 100
Single Pulse Time(s)
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 1.5 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01 0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
REV 1.0
4
D-45-3



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