P1006BD Datasheet PDF - UNIKC

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P1006BD
UNIKC

Part Number P1006BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P1006BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID
66A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
66
42
150
Avalanche Current
IAS 38.5
Avalanche Energy
L =0.1mH
EAS
74
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
96
38
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2 Package limitation current is 30A.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
1.3
UNITS
°C / W
REV 1.1
1 2015/8/20

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