P0925AD Datasheet PDF - NIKO-SEM

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P0925AD
NIKO-SEM

Part Number P0925AD
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P0925AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.48Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1.8mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
9
5.4
36
9
72
73
29
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
TYPICAL
MAXIMUM
1.7
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
250
2 2.6
4
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125 °C
1
A
10
VGS = 10V, ID = 4.5A
0.39 0.48 Ω
VDS = 10V, ID = 4.5A
11 S
REV 1.0
1
D-10-1



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NIKO-SEM
N-Channel Enhancement Mode
P0925AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
793
65
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS =200V, VGS = 10V,
ID = 9A
VDD = 125V,
ID 9A, VGS = 10V, RGEN = 6Ω
22
29.7
4
11.3
12
39
46
Fall Time2
tf
53
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
Forward Voltage1
IS
VSD IF = 4.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 9A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
143
0.6
9
1.6
pF
nC
nS
A
V
nS
uC
REV 1.0
2
D-10-1



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NIKO-SEM
N-Channel Enhancement Mode
P0925AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
10
VGS=10V
VGS=9V
8 VGS=8V
VGS=7V
VGS=6V
VGS=5V
6
Transfer Characteristics
10
8
6
4 VGS=4V
2
0
012345
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.4
6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=4.5A
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
VDS=200V
8 ID=9A
6
4
25
2
125
-20
0
01234567
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
1400
1200
1000
800 CISS
600
400
200
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
1
2
150
25
0
0 6 12 18 24 30
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
REV 1.0
3
D-10-1



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NIKO-SEM
N-Channel Enhancement Mode
P0925AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This
Area is Limited
by RDS(ON)
10
Single Pulse Maximum Power Dissipation
500
Single Pulse
400 RθJC = 1.7˚C/W
TC=25˚C
300
1ms
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1.7 ˚C/W
4.Single Pulse
10ms
100ms
DC
0.1
1
10 100
VDS, Drain-To-Source Voltage(V)
1000
200
100
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Transient Thermal Response Curve
100
0.1
single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 1.7 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.1
1
10 100
T1 , Square Wave Pulse Duration[sec]
REV 1.0
4
D-10-1



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