P0920BD Datasheet PDF - UNIKC

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P0920BD
UNIKC

Part Number P0920BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P0920BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.42Ω @VGS = 10V
ID
9A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
9
5
31
9
Avalanche Energy
L =2.8mH
EAS
113
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
62.5
25
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2 °C / W
REV 1.0
1 2013-11-29

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