P0920AD Datasheet PDF - UNIKC

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P0920AD
UNIKC

Part Number P0920AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P0920AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.42Ω @VGS = 10V
ID
9A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1, 2
TC = 25 °C
TC = 100 °C
ID
IDM
9
5.8
36
Avalanche Current
IAS 9
Avalanche Energy
L = 2.8mH
EAS
112
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62
25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2 °C / W
REV1.2
1 2014-4-23



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P0920AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
200
2 2.6 4
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 125 °C
VGS = 10V, ID = 4.5A
VDS = 10V, ID = 4.5A
1
10
0.35 0.42
10
DYNAMIC
Input Capacitance
Ciss
852
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
122
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 160V, VGS = 10V, ID = 9A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
tr VDD = 100V,
Turn-Off Delay Time2
td(off)
ID @ 9A, VGS = 10V, RGEN = 6Ω
Fall Time2
tf
25
27
3.6
13
35
250
149
120
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 9A, VGS = 0V
9
1.6
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
VGS = 0V, IF = 9A,
dlF/dt = 100A / μS
166
861
2Independent of operating temperature.
UNITS
V
nA
mA
Ω
S
nF
nC
nS
A
V
nS
nC
REV1.2
2 2014-4-23



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P0920AD
N-Channel Enhancement Mode MOSFET
REV1.2
3 2014-4-23



No Preview Available !

P0920AD
N-Channel Enhancement Mode MOSFET
REV1.2
4 2014-4-23



P0920AD datasheet pdf
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P0920AD pdf
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