P0920AD Datasheet PDF - NIKO-SEM

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P0920AD
NIKO-SEM

Part Number P0920AD
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200 0.42Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 2.8mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2Limited by package.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
9
5.8
36
9
112
62
25
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
200
2 2.6
4
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 °C
1
A
10
VGS = 10V, ID = 4.5A
0.35 0.42 Ω
VDS = 10V, ID = 4.5A
10 S
REV1.0
1
D-51-1



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NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss 852
Coss VGS = 0V, VDS = 25V, f = 1MHz 122 nF
Reverse Transfer Capacitance
Crss
25
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs VDS =160V, VGS = 10V,
ID = 9A
Qgd
27
3.6 nC
13
Turn-On Delay Time2
td(on)
35
Rise Time2
Turn-Off Delay Time2
tr VDD = 100V,
250
nS
td(off)
ID 9A, VGS = 10V, RGEN = 6Ω
149
Fall Time2
tf
120
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 9A, VGS = 0V
9A
1.6 V
Reverse Recovery Time
trr IF = 9A, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
VGS = 0V
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
166 nS
861 nC
REV1.0
2
D-51-1



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NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
10
VGS =10V
VGS =9V
VGS =8V
VGS =7V
VGS =6V
8 VGS =5V
VGS =4.5V
Transfer Characteristics
10
8
66
4
VGS =4V
2
0
0 12 3 45 6
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) 2.0
RDS(ON) 1.8
RDS(ON) 1.6
RDS(ON) 1.4
RDS(ON) 1.2
RDS(ON) 1.0
RDS(ON) 0.8
RDS(ON)
RDS(ON)
10
0.6 VGS=10V
ID=4.5A
0.4
-50 -25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
Characteristics
8
ID=9A
6 VDS=160V
4
2
4
25
2
125
-20
0
012 345
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2.00E+03
6
1.60E+03
1.20E+03
8.00E+02
Ciss
4.00E+02
0.00E+00
0
Crss
Coss
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.00E+02
1.00E+01
1.00E+00
150
25
0
0 6 12 18 24 30
Qg , Total Gate Charge(nC)
1.00E-01
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV1.0
3
D-51-1



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NIKO-SEM
N-Channel Enhancement Mode
P0920AD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Lim ited by RDS(ON)
10
1m s
Single Pulse Maximum Power Dissipation
800
640
480
SINGLE PULSE
RθJC = 2˚ C/W
TC=25˚ C
1
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 2˚ C/W
4.Single Pulse
10m s
100m s
DC
0.1
1
10 100 1000
VDS, Drain-To-Source Voltage(V)
320
160
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
1.00E+01
Transient Thermal Response Curve
1.00E+00
1.00E-01
Dut y cycle= 0.5
0.2
0.1
0.05
0.02
0.01
Single Pluse
1.00E-02
1.E-04
1.E-03
Notes
1.E-02
1.E-01
1.E+00
T1 , Square Wave Pulse Duration[sec]
1.Duty cycle, D= t1 / t2
2.RthJC = 2 /W
3.TJ-TC = P*RthJC
4.RthJC = r(t)*RthJC
1.E+01
1.E+02
REV1.0
4
D-51-1



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