P0908ATF Datasheet PDF - NIKO-SEM

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P0908ATF
NIKO-SEM

Part Number P0908ATF
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908ATF
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 9mΩ
ID
43A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
43
27
160
49
120
37
15
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
80
2 3.4
4
V
±100 nA
1
A
10
REV1.1
F-51-1
1



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908ATF
TO-220F
Halogen-Free & Lead-Free
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 20A
VGS = 7V, ID = 15A
VDS = 10V, ID = 20A
DYNAMIC
79
8.1 12
57
Input Capacitance
Ciss
2853
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
355
Reverse Transfer Capacitance
Crss
199
Gate Resistance
Rg VGS = 0V, VDS = 0V ,f = 1MHz
0.9
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=7V)
Qgs
VDS = 40V, VGS = 10V,
ID = 20A
55
41.5
15.3
Gate-Drain Charge2
Qgd
19.4
Turn-On Delay Time2
td(on)
37
Rise Time2
Turn-Off Delay Time2
Fall Time2
tr
td(off)
tf
VDD = 40V
ID 20A, VGS = 10V, RGEN = 6Ω
45
61
42
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A,VGS = 0V
26
1.4
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
34
37
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV1.1
F-51-1
2



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908ATF
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
30
VGS=10V
VGS=9V
VGS=8V
24 VGS=7V
VGS=6V
VGS=5.5V
Transfer Characteristics
30
24
18 18
12
6 VGS=5V
0
012345
VDS, Drain-To-Source Voltage(V)
6
On-Resistance VS Gate-To-Source
0.1
12
25
6
125
-20
0
01234567
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Drain Current
0.02
0.08
0.016
0.06
0.04
0.02
ID=20A
0
2468
VGS, Gate-To-Source Voltage(V)
10
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=20A
0.6
0.4
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
0.012
0.008
0.004
VGS=7V
VGS=10V
0
0 6 12 18 24
ID , Drain-To-Source Current(A)
30
3500
3000
2500
2000
1500
1000
500
0
0
Capacitance Characteristic
CISS
COSS
CRSS
5 10 15 20 25
VDS, Drain-To-Source Voltage(V)
30
REV1.1
F-51-1
3



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908ATF
TO-220F
Halogen-Free & Lead-Free
Gate charge Characteristics
10
Source-Drain Diode Forward Voltage
100
VDS=40V
8 ID=20A
6
10
4
150
25
1
2
0
0 10 20 30 40 50
Qg , Total Gate Charge(nC)
Safe Operating Area
1000
Operation in This
Area is Limited by
RDS(ON)
100
60
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
Single Pulse Maximum Power Dissipation
600
Single Pulse
480 RθJC = 3.3˚C/W
TC=25˚C
10
1ms
10ms
1 NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 3.3˚C/W
4.Single Pulse
100ms
DC
0.1
0.1 1 10 100
VDS, Drain-To-Source Voltage(V)
1000
360
240
120
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
Transient Thermal Response Curve
10
100
REV1.1
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 3.3 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
4
100
F-51-1



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