P0908AD Datasheet PDF - UNIKC

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P0908AD
UNIKC

Part Number P0908AD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P0908AD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 9mΩ @VGS = 10V
ID
69A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1,2
TC= 25 °C
TC= 100 °C
ID
IDM
69
44
160
Avalanche Current
IAS 38
Avalanche Energy
L=0.1mH
EAS
72
Power Dissipation
TC= 25 °C
TC= 100°C
PD
96
38
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Package limitation current is 55A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.1
1 2015/7/29



No Preview Available !

P0908AD
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
80
V
234
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 64V, VGS = 0V
VDS =60V, VGS = 0V, TJ = 125°C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID =15A
VGS =10V, ID =20A
8.4 12
7.7 9
Forward Transconductance1
gfs
VDS =10V, ID = 20A
57 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
2853
355
199
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
0.9 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 40V, VGS = 10V,
ID = 20A
VDD = 40V ,ID @ 20A,
VGS = 10V, RGEN =6Ω
55
15 nC
19
37
45
nS
61
42
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
68 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
34 nS
37 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 55A.
REV 1.1
2 2015/7/29



No Preview Available !

P0908AD
N-Channel Logic Level Enhancement Mode MOSFET
REV 1.1
3 2015/7/29



No Preview Available !

P0908AD
N-Channel Logic Level Enhancement Mode MOSFET
REV 1.1
4 2015/7/29



P0908AD datasheet pdf
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P0908AD pdf
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