P0808ATG Datasheet PDF - UNIKC

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P0808ATG
UNIKC

Part Number P0808ATG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P0808ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 8mΩ @VGS = 10V
ID
89A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
89
63
250
Avalanche Current
IAS 85
Avalanche Energy
L = 0.1mH
EAS
362
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
160
80
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqCS
TYPICAL
0.5
MAXIMUM UNITS
0.94
°C / W
Ver 1.0
1 2012/4/16

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