P0808ATG Datasheet PDF - NIKO-SEM

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P0808ATG
NIKO-SEM

Part Number P0808ATG
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P0808ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 8mΩ
ID
89A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
±20
89
63
250
85
362
160
80
-55 to 175
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Limited by package.
TYPICAL
0.5
MAXIMUM
0.94
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 80A
VDS = 50V, ID = 80A
LIMITS
UNIT
MIN TYP MAX
75
2 2.3 4.0
V
±250 nA
1
µA
10
85 A
6.5 8 mΩ
50 S
REV 1.2
1 Oct-26-2009



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NIKO-SEM
N-Channel Enhancement Mode
P0808ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS =60V, VGS = 10V,
ID = 80A
VDD = 40V,
ID 40A, VGS = 10V, RGS = 25Ω
7320
980
404
129
51
43.5
54
243
297
166
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 80A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 80A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
120
410
89
1.3
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P0808ATG”, DATE CODE or LOT #
REV 1.2
2 Oct-26-2009



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NIKO-SEM
N-Channel Enhancement Mode
P0808ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
On Resistance VS Temperature
RDS(ON) 2.5
RDS(ON) 2.0
RDS(ON) 1.5
RDS(ON) 1.0
RDS(ON) 0.5
VGS=10V
ID=80A
-50 -25 0 25 50 75 100 125 150 175
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.004
0
0
On-Resistance VS Drain Current
VGS = 5V
VGS = 10V
20 40 60
ID - Drain Current(A)
80
100
10500
9000
7500
6000
4500
3000
1500
0
1
Capacitance Characteristic
VGS= 0V, f=1 M HZ
C iss
Coss
C rs s
10
VDS, D rain-to-Source Voltage(V)
100
Body Diode Forward Voltage VS Source current
100
TJ=175°C
10
TJ=25°C
1
0.1
0.0
VGS= 0V
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage(V)
REV 1.2
3 Oct-26-2009



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NIKO-SEM
N-Channel Enhancement Mode
P0808ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
100 Drain Current VS Temperature
90
Typical Gate Charge Vs. Gate-to-Source Voltage
20
80 15
70
60 12 VDS=60V
50 ID= 80A
40 8
30
20 4
10
0
25 50 75 100 125 150
TA ,Ambient Temperature[˚۫ C]
Safe Operating Area
1000
Operation in This
Area is Lim ited by
RDS(ON)
100
100us
175
0
0
35 70
105 140
Qg, Total Gate Charge (nC)
Single Pulse Maximum Power Dissipation
5000
4000
3000
SINGLE PULSE
RθJC =0.94˚ C/W
TC=25˚ C
1m s
10
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 0.94˚ C/W
4.Single Pulse
10m s
DC
1
1 10 100
VDS, Drain-To-Source Voltage(V)
2000
1000
0
0.0001
0.001
0.01
0.1
1
1000 Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
10
1.00E+00
Duty Cycle=0.5
1.00E-01
0.2
0.1
0.05
0.02
0.01
single Pluse
1.00E-02
1.E-04
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 0.94 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E-03
1.E-02
T1 , Square Wave Pulse Duration[sec]
1.E-01
1.E+00
REV 1.2
4 Oct-26-2009



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