P057AAT Datasheet PDF - UNIKC

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P057AAT
UNIKC

Part Number P057AAT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P057AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 5.8mΩ @VGS = 10V
ID
129A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
129
82
410
Avalanche Current
IAS 60
Avalanche Energy
L = 0.3mH
EAS
557
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
192
77
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Limited by package.
2Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.65
63
UNITS
°C / W
Ver 1.0
1 2012/4/16

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