P057AAT Datasheet PDF - NIKO-SEM

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P057AAT
NIKO-SEM

Part Number P057AAT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 5.8mΩ
ID
129A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.3mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Limited by package.
2Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
129
82
410
60
557
192
77
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
0.65
63
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
75
2 2.5
4
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
1
A
10
VDS = 10V, VGS = 10V
129
A
REV 1.1
Jul-29-2009
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NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
DYNAMIC
RDS(ON)
gfs
VGS = 10V, ID = 100A
VDS = 25V, ID = 50A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0mV, VDS = 0V, f = 1MHz
VDS =60V, VGS = 10V,
ID = 80A
VDD = 40V,
ID 40A, VGS = 10V, RGS = 2.5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 100A, VGS = 0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Limited by package.
4.7 5.8 mΩ
100 S
12500
1090
629
3.8 4
223
64
80
40
60
130
50
pF
Ω
nC
nS
129 A
1.3 V
90 nS
260 nC
REMARK: THE PRODUCT MARKED WITH “P057AAT”, DATE CODE or LOT #
REV 1.1
Jul-29-2009
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NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
300
VGS = 10V VGS = 7V
250
Transfer Characteristics
300
250
200 200
VGS = 4.5V
150 150
100
50
VGS = 3V
0
0 12 3 45
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) x 2.0
RDS(ON) x 1.8
RDS(ON) x 1.6
RDS(ON) x 1.4
RDS(ON) x 1.2
RDS(ON) x 1.0
RDS(ON) x 0.8
RDS(ON) x 0.6
- 50 - 25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
1 0 IDC=h8a0rAacteristics
VDS = 60V
8
6
4
2
100
TJ=125° C
50 TJ=25° C
TJ=-20° C
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VGS, Gate-To-Source Voltage(V)
7.0
14000
12000
Capacitance Characteristic
VGS= 0V, f=1 MHZ
Ciss
8.0
10000
8000
6000
4000
2000
0
1
Coss
Crss
VDS, Drain-To-So1u0rce Voltage(V)
100
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
TJ =150° C
1.0E+00
1.0E-01
TJ =25° C
1.0E-02
1.0E-03
0 1.0E-04
0 45 90 135 180 225
0.1 0.3
0.5 0.7 0.9 1.1
1.3
Qg , Total Gate Charge
VSD, Source-To-Drain Voltage(V)
REV 1.1
Jul-29-2009
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NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This
Area is Limited by
100
Single Pulse Maximum Power Dissipation
3500
3000
2500
SINGLE PULSE
RθJC = 0.65˚ C/W
TC=25˚ C
100us
2000
1500
10
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 0.65˚ C/W
4.Single Pulse
1
1 VDS, Drain-To-Sourc1e0 Voltage(V)
1m s
1000
10m s
100m s
DC
100
500
0
0.0001
0.001
0.01
0.1
1
Single Pulse Time(s)
10
Transient Thermal Response Curve
T1 , Square Wave Pulse Duration[sec]
REV 1.1
Jul-29-2009
4



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