P0465CD Datasheet PDF - NIKO-SEM

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P0465CD
NIKO-SEM

Part Number P0465CD
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
650
±30
4
2.5
15
2
20
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
650
2.5
V
3.3 4.5
±100 nA
1
A
10
REV1.0
E-09-2
1



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NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
DYNAMIC
2.1 2.6 Ω
2.5 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
512
52 pF
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 520V, ID = 4A, VGS = 10V
VGS = 0V , VDD = 350V,
ID = 4A, RG= 25Ω
13
3.8 nC
4.3
27
59
nS
90
74
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
4A
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
374 nS
2.1 uC
REV1.0
E-09-2
2



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NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
5
Transfer Characteristics
5
4
VGS=10V
3
VGS=9V
VGS=8V
VGS=7V
2
VGS=6V
VGS=5.5V
1
VGS=5V
0
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
VGS=10V
0.5 ID=2A
0.0
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=520V
ID=4A
8
6
4
3
2
25
1
0
02468
VGS, Gate-To-Source Voltage(V)
10
Capacitance Characteristic
900
800
700
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
1
150
25
2
0
0 3 6 9 12 15
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV1.0
E-09-2
3



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NIKO-SEM
N-Channel Enhancement Mode
P0465CD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Single Pulse Maximum Power Dissipation
600
Single Pulse
480 RθJC = 2.3 ˚C/W
10 TC=25˚C
1
Operation in This
Area is Limited
by RDS(ON)
0.1 NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.3˚C/W
4.Single Pulse
0.01
10
100
1ms
10ms
100ms
DC
1000
VDS, Drain-To-Source Voltage(V)
360
240
120
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Response Curve
10
100
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
Notes
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
1.Duty cycle, D= t1 / t2
2.RthJC = 2.3 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10
100
REV1.0
E-09-2
4



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P0465CD pdf
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