P0306BT Datasheet PDF - NIKO-SEM

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P0306BT
NIKO-SEM

Part Number P0306BT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0306BT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 3.4mΩ
ID
162A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2,3
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
162
102
300
119
708
178
71
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Package limitation current is 110A.
TYPICAL
MAXIMUM
0.7
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
60
1.3 1.8 2.3
V
±100 nA
1
A
10
REV 1.0
E-25-4
1

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