NVATS5A304PLZ Datasheet PDF - ON Semiconductor


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NVATS5A304PLZ
ON Semiconductor

Part Number NVATS5A304PLZ
Description Power MOSFET
Page 6 Pages

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NVATS5A304PLZ
Power MOSFET
60 V, 6.5 m, 120 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
PW 10s, duty cycle 1%
Power Dissipation
Tc = 25C
ID
IDP
PD
Value
60
20
120
480
108
Unit
V
V
A
A
W
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
656 mJ
Avalanche Current (Note 3)
IAV
75 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 36 V, L = 100 H, IAV = 75 A (Fig.1)
3 : L 100 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol
RJC
Value
1.38
Unit
C/W
Junction to Ambient (Note 4)
RJA
77.2
Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad.
C/W
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VDSS
60 V
RDS(on) Max
6.5 m@ 10 V
8.9 m@ 4.5 V
ID Max
120 A
ELECTRICAL CONNECTION
P-Channel
2,4
1 1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
12
3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
NVATS5A304PLZ/D



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NVATS5A304PLZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10 A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
1.2 2.6 V
Forward Transconductance
gFS VDS = 10 V, ID = 50 A
100 S
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
ID = 50 A, VGS = 10 V
ID = 50 A, VGS = 4.5 V
5.0 6.5 m
6.4 8.9 m
Input Capacitance
Ciss
13,000
pF
Output Capacitance
Coss
VDS = 20 V, f = 1 MHz
1,080
pF
Reverse Transfer Capacitance
Crss
760 pF
Turn-ON Delay Time
td(on)
80 ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
See Fig.2
650 ns
780 ns
Fall Time
tf
460 ns
Total Gate Charge
Qg
250 nC
Gate to Source Charge
Qgs VDS = 36 V, VGS = 10 V, ID = 100 A
55 nC
Gate to Drain “Miller” Charge
Qgd
50 nC
Forward Diode Voltage
VSD
IS = 100 A, VGS = 0 V
1.0 1.5 V
Reverse Recovery Time
trr See Fig.3
90 ns
Reverse Recovery Charge
Qrr IS = 100 A, VGS = 0 V, di/dt = 100 A/s
245 nC
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
D
NVATS5A304PLZ
G
S
L
VDD
Driver MOSFET
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