NVATS5A112PLZ Datasheet PDF - ON Semiconductor

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NVATS5A112PLZ
ON Semiconductor

Part Number NVATS5A112PLZ
Description Power MOSFET
Page 6 Pages


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NVATS5A112PLZ
Power MOSFET
60 V, 43 m, 27 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW 10 s, duty cycle 1%
Power Dissipation
Tc = 25C
VDSS
VGSS
ID
IDP
PD
60 V
20 V
27 A
81 A
48 W
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
50 mJ
Avalanche Current (Note 3)
IAV
13 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 10 V, L = 500 H, IAV = 13 A
3 : L 500 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol
RJC
Value
3.1
Unit
C/W
Junction to Ambient (Note 4)
RJA
80.5
Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad.
C/W
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VDSS
60 V
RDS(on) Max
43 m@ 10 V
59 m@ 4.5 V
63 m@ 4 V
ID Max
27 A
ELECTRICAL CONNECTION
P-Channel
2,4
1 1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
12
3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
NVATS5A112PLZ/D



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NVATS5A112PLZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1 A
Gate to Source Leakage Current
IGSS
VGS = 16 V, VDS = 0 V
10 A
Gate Threshold Voltage
VGS(th)
VDS = 10 V, ID = 1 mA
1.2 2.6 V
Forward Transconductance
gFS VDS = 10 V, ID = 13 A
24 S
Static Drain to Source On-State
Resistance
RDS(on)
ID = 13 A, VGS = 10 V
ID = 7 A, VGS = 4.5 V
ID = 3.5 A, VGS = 4 V
33 43 m
42 59 m
45 63 m
Input Capacitance
Ciss
1,450
pF
Output Capacitance
Coss
VDS = 20 V, f = 1 MHz
155 pF
Reverse Transfer Capacitance
Crss
125 pF
Turn-ON Delay Time
td(on)
10 ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
See Fig.1
80 ns
150 ns
Fall Time
tf
120 ns
Total Gate Charge
Qg
33.5 nC
Gate to Source Charge
Qgs VDS = 30 V, VGS = 10 V, ID = 25 A
5.3 nC
Gate to Drain “Miller” Charge
Qgd
7.9 nC
Forward Diode Voltage
VSD
IS = 25 A, VGS = 0 V
0.97
1.5 V
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
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