NTSS3100 Datasheet PDF - ON Semiconductor

www.Datasheet-PDF.com

NTSS3100
ON Semiconductor

Part Number NTSS3100
Description Low Leakage Trench-based Schottky Rectifier
Page 5 Pages


NTSS3100 datasheet pdf
Download PDF
NTSS3100 pdf
View PDF for Mobile

No Preview Available !

NTSS3100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3 AMPERES
100 VOLTS
MARKING
DIAGRAM
SMB
CASE 403A
TH31
AYWWG
G
TH31
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTSS3100T3G
Package
SMB
(Pb−Free)
Shipping
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
Publication Order Number:
NTSS3100/D



No Preview Available !

NTSS3100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 116°C)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 109°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
3.0
6
50
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
Tstg −65 to +150 °C
TJ
−55 to +150
°C
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJL − 17.4 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TJ = 25°C)
(iF = 3.0 Amps, TJ = 125°C)
vF V
0.874
0.995
0.66 0.685
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
2.4 13 mA
1.0 3 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
14.3
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2



No Preview Available !

NTSS3100
TYPICAL CHARACTERISTICS
100 100
10
TA = 150°C
TA = 125°C
1 TA = 85°C
TA = 25°C
0.1 TA = −55°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
TA = 150°C
10 TA = 125°C
TA = 85°C
1
TA = 25°C
TA = −55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−02
1.E−03
TA = 150°C
TA = 125°C
1.E−02
1.E−03
TA = 150°C
TA = 125°C
1.E−04
1.E−05
TA = 85°C
1.E−04
TA = 85°C
1.E−06
TA = 25°C
1.E−05
TA = 25°C
1.E−07
1.E−06
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
6
5 DC
4
Square Wave
3
2
1
RqJL = 17.4°C/W
0
0 20 40 60
80 100 120
TC, LEAD TEMPERATURE (°C)
Figure 6. Current Derating
140
www.onsemi.com
3



No Preview Available !

NTSS3100
TYPICAL CHARACTERISTICS
6
IPK/IAV
= 20
5
4
3
2
IPK/IAV = 10
Square Wave
IPK/IAV = 5
DC
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
0.01
0.001
0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
100
1000
www.onsemi.com
4



NTSS3100 datasheet pdf
Download PDF
NTSS3100 pdf
View PDF for Mobile


Related : Start with NTSS310 Part Numbers by
NTSS3100 Low Leakage Trench-based Schottky Rectifier NTSS3100
ON Semiconductor
NTSS3100 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact