NTSAF5100 Datasheet PDF - ON Semiconductor

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NTSAF5100
ON Semiconductor

Part Number NTSAF5100
Description Low Leakage Trench-based Schottky Rectifier
Page 6 Pages


NTSAF5100 datasheet pdf
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NTSS5100, NTSAF5100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
These are PbFree and HalideFree Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
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SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
MARKING
DIAGRAM
SMB
CASE 403A
AYWW
TH51G
G
SMAFL
CASE 403AA
STYLE 6
AYWW
H51G
G
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTSS5100T3G
Package
SMB
(PbFree)
Shipping
5000 /
Tape & Reel
NTSAF5100T3G
SMAFL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 Rev. 1
1
Publication Order Number:
NTSS5100/D



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NTSS5100, NTSAF5100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 73°C)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 54°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
5.0
10
50
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
Tstg 65 to +175 °C
TJ
55 to +175
°C
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Steady State (Note 1)
(NTSAF5100)
JunctiontoLead
JunctiontoAmbient
(NTSS5100)
JunctiontoLead
JunctiontoAmbient
1. Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board
Symbol
RθJL
RθJA
RθJL
RθJA
Max
25
90
13.1
71.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TJ = 25°C)
(iF = 5.0 Amps, TJ = 25°C)
Symbol
vF
Typ
0.56
0.65
Max Unit
V
0.69
(iF = 3.0 Amps, TJ = 125°C)
(iF = 5.0 Amps, TJ = 125°C)
0.50
0.56 0.61
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
2.6 25 mA
2.2 9 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
54.4
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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100
10
TA = 150°C
TA = 125°C
1 TA = 85°C
NTSS5100, NTSAF5100
TYPICAL CHARACTERISTICS
TA = 25°C
100
TA = 150°C
TA = 125°C
10
TA = 85°C
1
TA = 25°C
0.1
0
TA = 55°C
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.E01
1.E02
1.E03
1.E04
1.E05
1.E06
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = 55°C
0
1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E01
1.E02
TA = 150°C
TA = 125°C
1.E03
TA = 85°C
1.E04
1.E05
TA = 25°C
1.E07
1.E06
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 10
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
9
8 DC
RqJL = 13.1°C/W
7
6 Square Wave
5
4
3
2
1
0
0 20 40 60 80 100 120 140
TL, LEAD TEMPERATURE (°C)
Figure 6. Current Derating for NTSS5100
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NTSS5100, NTSAF5100
TYPICAL CHARACTERISTICS
18
16
14 IPK/IAV = 20
12
10 IPK/IAV = 10
8 IPK/IAV = 5
6 SQUARE WAVE
4
2 DC
0
01 2 3 4
56 7
IF(AV), Average Forward Current (A)
Figure 7. Forward Power Dissipation
9
8 DC
RqJL = 25°C/W
7
6 Square Wave
5
4
3
2
1
0
0 20 40 60 80 100 120 140
TL, LEAD TEMPERATURE (°C)
Figure 8. Current Derating for NTSAF5100
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 9. Typical Transient Thermal Response, JunctiontoAmbient for NTSS5100
100
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
1000
0.1
0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10 100
t, PULSE TIME (S)
Figure 10. Typical Transient Thermal Response, JunctiontoAmbient for NTSAF5100
1000
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