NTMFS4955NT3G Datasheet PDF - ON Semiconductor


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NTMFS4955NT3G
ON Semiconductor

Part Number NTMFS4955NT3G
Description Power MOSFET
Page 7 Pages

NTMFS4955NT3G datasheet pdf
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NTMFS4955N
Power MOSFET
30 V, 48 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 100°C
TA = 25°C
TA = 25°C
TA = 100°C
VDSS
VGS
ID
PD
ID
30
±20
16.7
10.5
2.70
25.2
15.9
V
V
A
W
A
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
6.16 W
9.7 A
6.2
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
48 A
30
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
23.2 W
210 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
21
6.0
34
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 7
1
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V(BR)DSS
30 V
RDS(ON) MAX
5.6 mW @ 10 V
8.5 mW @ 4.5 V
D (5,6)
ID MAX
48 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4955N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4955NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4955NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4955N/D



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NTMFS4955N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – (t 10 s) (Note 3)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
5.4
46.3
136.2
20.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 11.0 A,
Tcase = 25°C, ttransient = 100 ns
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VVDGSS
=
=
0 V,
24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
CISS
COSS
CRSS
CRSS /
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
30
34
1.2
Typ Max Unit
V
V
21 mV/°C
1.0
10
±100
mA
nA
1.7 2.2
V
3.9 mV/°C
4.5 5.6
4.5
6.8 8.5 mW
6.7
52 S
1264
483
143
0.11
0.22
10.8
2.0
3.8
4.2
21.5
pF
nC
nC
9.5
32.7
16.4 ns
6.2
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NTMFS4955N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.4
27.5
20.3
4.1
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.86
0.75
25.8
12.4
13.4
13.6
1.1
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.00
0.005
1.84
1.0
2.2
Unit
ns
V
ns
nC
nH
nH
nH
W
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NTMFS4955N
TYPICAL CHARACTERISTICS
120
110
10 V
100
90
80
70
60
50
40
30
20
10
0
0
4.5 V
TJ = 25°C
123
4.0 V
3.5 V
3.0 V
VGS = 2.5 V
45
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
1
VDS = 10 V
TJ = 55°C
TJ = 25°C
TJ = 125°C
23 4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
3
ID = 30 A
456789
VGS (V)
Figure 3. OnResistance vs. VGS
1.7
1.6 ID = 30 A
1.5 VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
0.011
0.010 T = 25°C
0.009
0.008
0.007
VGS = 4.5 V
0.006
0.005
0.004
VGS = 10 V
0.003
10 10 20 30 40 50 60 70 80 90 100 110 120
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
10,000
TJ = 150°C
1,000
TJ = 125°C
100 TJ = 85°C
10
150 5
10 15
VGS = 0 V
20 25
30
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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