NTMFS4849N Datasheet PDF - ON Semiconductor


www.Datasheet-PDF.com

NTMFS4849N
ON Semiconductor

Part Number NTMFS4849N
Description Power MOSFET
Page 6 Pages

NTMFS4849N datasheet pdf
View PDF for PC
NTMFS4849N pdf
View PDF for Mobile


No Preview Available !

NTMFS4849N
www.DataSheet4U.com
Power MOSFET
30 V, 71 A, Single NChannel, SO8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are PbFree Devices*
Applications
Refer to Application Note AND8195/D
CPU Power Delivery
DCDC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±16
16.1
11.6
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
PD
ID
2.17 W
26.0 A
18.8
5.7 W
10.2 A
7.3
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.87 W
71 A
51
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
42.4 W
142 A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxpkg
TJ,
TSTG
IS
dV/dt
100
55 to
+150
42
6
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
109 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.1 mW @ 10 V
7.9 mW @ 4.5 V
ID MAX
71 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4849N
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4849NT1G
Package
SO8FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4849NT3G SO8FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
May, 2010 Rev. 2
1
Publication Order Number:
NTMFS4849N/D



No Preview Available !

NTMFS4849N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – Steady State (Note 2)
JunctiontoAmbient t v 10 sec
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
www.DataSheet4U.com
Value
2.95
57.6
143.3
21.95
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±16 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.45
Typ
25.2
1.9
5.0
3.9
3.9
6.2
6.1
62
2040
361
181
15
2.2
5.7
5.1
34.6
15.6
45.1
18.2
5.7
Max
1
10
±100
2.5
5.1
7.9
22
Unit
V
mV/°C
mA
nA
V
mV/°C
mW
S
pF
nC
nC
ns
http://onsemi.com
2



No Preview Available !

NTMFS4849N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
www.DataSheet4U.com
Min Typ Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.4
19.4
25.3 ns
4.4
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.84 1.0
0.7
12.5
8.3
4.2
3.0
0.93
0.005
1.84
0.9
V
ns
nC
nH
W
TYPICAL CHARACTERISTICS
130
120
10 V
VGS = 4.2 V
110
TJ = 25°C
4.0 V
100
90 5.0 V
80
70
4.5 V
3.8 V
3.6 V
60 3.4 V
50
40 3.2 V
30
20
10
0
3.0 V
2.8 V
2.6 V
012 3 4 5 6
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
0
VDS 10 V
TJ = 125°C
TJ = 25°C
TJ = 55°C
12 345
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
http://onsemi.com
3



No Preview Available !

NTMFS4849N
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
0.020
0.018
0.016
ID = 30 A
TJ = 25°C
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
2 3 4 5 6 7 8 9 10 11
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
1.75
1.50
ID = 30 A
VGS = 10 V
1.25
1.00
0.75
0.010
0.009
0.008
TJ = 25°C
0.007
VGS = 4.5 V
0.006
0.005
0.004
VGS = 11.5 V
0.003
0.002
0.001
0
15 20 25 30 35 40 45 50 55 60 65 70
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
TJ = 125°C
100
0.50
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
10
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
2500
2250
Ciss
2000
1750
1500
1250
1000
750
Coss
TJ = 25°C
500
250 Crss
0
0
5
10 15 20
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
12
11
10 VDS
9
8
7
6
5
4 Qgs
Qgd
3
2
1
0
25 0 5 10
QT
15 20
VGS
ID = 30 A
TJ = 25°C
25 30
16
14
12
10
8
6
4
2
0
35
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
http://onsemi.com
4




NTMFS4849N datasheet pdf
Download PDF
NTMFS4849N pdf
View PDF for Mobile


Similiar Datasheets : NTMFS4841N NTMFS4845N NTMFS4846N NTMFS4847N NTMFS4849N

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact