NTMFS4847N Datasheet PDF - ON Semiconductor


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NTMFS4847N
ON Semiconductor

Part Number NTMFS4847N
Description Power MOSFET
Page 6 Pages

NTMFS4847N datasheet pdf
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NTMFS4847N
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Power MOSFET
30 V, 85 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are PbFree Device
Applications
Refer to Application Note AND8195/D
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
30
±16
18
13
2.21
29.5
21
5.8
11.5
8.2
0.88
85
61
48.1
170
V
V
A
W
A
W
A
W
A
W
A
Current limited by package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 33 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxpkg
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
48
6
163
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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V(BR)DSS
30 V
RDS(ON) MAX
4.1 mW @ 10 V
6.2 mW @ 4.5 V
ID MAX
85 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4847N
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMFS4847NT1G SO8FL
(PbFree)
1500 /
Tape & Reel
NTMFS4847NT3G SO8FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
March, 2009 Rev. 1
1
Publication Order Number:
NTMFS4847N/D



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NTMFS4847N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – Steady State (Note 2)
JunctiontoAmbient t v 10 sec
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
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Value
2.6
56.6
142
21.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±16 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.45
Typ
25
1.8
5.2
3.2
3.2
5.0
5.0
74
2614
466
241
19.2
1.6
7.3
6.1
43.8
17.7
53
21
8.7
Max
1
10
±100
2.5
4.1
6.2
28
Unit
V
mV/°C
mA
nA
V
mV/°C
mW
S
pF
nC
nC
ns
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NTMFS4847N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
SWITCHING CHARACTERISTICS (Note 4)
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Min Typ Max
Unit
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS
=
0
VI,Sd=IS/3d0t
=
A
100
A/ms,
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
10.5
20.8
28.1
6.5
0.8 1.0
0.7
15.4
8.2
7.2
6.0
0.93
0.005
1.84
0.9
ns
V
ns
nC
nH
W
TYPICAL CHARACTERISTICS
110
100 10V
90
80
70
60
50
40
30
20
10
0
0
5.0 V
4.5 V
4.2 V
4.0 V
TJ = 25°C
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
12 3 4 5 6
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
120
110
100
90
80
70
60
50
40
30
20
10
0
0
VDS 10 V
TJ = 125°C
TJ = 25°C
12
TJ = 55°C
34
5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
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NTMFS4847N
TYPICAL CHARACTERISTICS
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0.040
0.035
0.030
0.025
0.020
ID = 30 A
TJ = 25°C
0.008
0.007
TJ = 25°C
0.006
0.005
VGS = 4.5 V
0.015
0.010
0.005
0
2 3 4 5 6 7 8 9 10 11
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.004
0.003
VGS = 11.5 V
0.002
30 40 50 60 70 80 90 100 110 120
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.8
ID = 30 A
1.6 VGS = 10 V
10,000
VGS = 0 V
1.4 TJ = 150°C
1.2 1000
1.0
0.8
0.6
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
3200
2800
Ciss
TJ = 25°C
2400
2000
1600
1200
800
Coss
400 Crss
0
04
8 12 16 20 24 28 32
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
5
TJ = 125°C
10 15 20
25
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
12
11
10
9
8
7
6
5
4 Qgs
3
2
1
0
04
QT
VGS
Qgd
ID = 30 A
TJ = 25°C
8 12 16 20 24 28 32 36 40 44
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
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