NTMFS4839N Datasheet PDF - ON Semiconductor

www.Datasheet-PDF.com

NTMFS4839N
ON Semiconductor

Part Number NTMFS4839N
Description Power MOSFET
Page 6 Pages


NTMFS4839N datasheet pdf
View PDF for PC
NTMFS4839N pdf
View PDF for Mobile


No Preview Available !

NTMFS4839N
Power MOSFET
30 V, 66 A, Single N−Channel, SO−8FL
Features
Low RDS(ON) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
www.DataSheet4U.com
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
15 A
TA = 85°C
11
Power Dissipation
RqJA (Note 1)
TA = 25°C PD 2.17 W
Continuous Drain
TA = 25°C
ID
9.5 A
Current RqJA
(Note 2)
Steady TA = 85°C
7.0
State
Power Dissipation
TA = 25°C PD 0.87 W
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
TC = 85°C
ID
66 A
48
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
41.7 W
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
IDM 132 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
Drain to Source DV/DT
IS
dV/dt
35 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
180.5 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.5 mW @ 10 V
9.5 mW @ 4.5 V
ID MAX
66 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4839N
S AYWWG
G GD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4839NT1G
Package
SO−8FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTMFS4839NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
1
Publication Order Number:
NTMFS4839N/D



No Preview Available !

NTMFS4839N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note )
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
Value
3.0
57.7
143.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
www.DataZSehreoeGta4tUe.cVoomltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
25 mV/°C
1
10
±100
mA
nA
2.5 V
5.8 mV/°C
4.5 5.5
4.5
mW
8.4 9.5
8.4
14.7 S
1588
352
196
13
1.6
4.8
5.8
28
18
pF
nC
nC
12
29
ns
18
7.0
8.0
21
ns
24
7.0
http://onsemi.com
2



No Preview Available !

NTMFS4839N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.9
0.8
22.2
12.5
9.7
10.8
1.2
Source Inductance
LS
Drain Inductance
Gate Inductance
www.DataSheet4U.com
Gate Resistance
LD
LG TA = 25°C
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
0.93
0.005
1.84
3.3
Unit
V
ns
nC
nH
nH
nH
W
90 90
80
4.6 V
6.0 V
4.4 V
4.2 V
TJ = 25°C
80
70 70
4.0 V
60
60
50 50
40 40
30 3.5 V
20
30
20
10 10
VGS = 3.0 V
00
012345678
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
TC = 25°C
TC = 125°C
TC = −55°C
2345
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.012
0.01
ID = 30 A
TJ = 25°C
0.01
0.009
0.008
0.007
VGS = 4.5 V
0.008
0.006
0.006
0.005
0.004
0.003
VGS = 11.5 V
0.002
0.004
2.5
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.001
10 15 20 25 30 35 40
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Temperature
http://onsemi.com
3



No Preview Available !

NTMFS4839N
1.80
1.60
ID = 30 A
VGS = 10 V & 4.5 V
1.40
100000
VGS = 0 V
10000
TJ = 150°C
1.20
1.00
0.80
1000
100
TJ = 125°C
0.60
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
www.DataSheet4U.comFigure 5. On−Resistance Variation with
Temperature
10
4 8 12 16 20 24 28
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
3000
2800
2600
2400
2200 CISS
2000
1800
1600
1400
1200
1000
CRSS
800
600
400
200
0
−15 −10
CRSS
−5 0
5
TJ = 25°C
CISS
COSS
10 15 20 25 30
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
12
10 VDS
8
6
4 QGS
2
0
QGD
QT
VGS
ID = 30 A
TJ = 25°C
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge
http://onsemi.com
4



NTMFS4839N datasheet pdf
Download PDF
NTMFS4839N pdf
View PDF for Mobile


Related : Start with NTMFS4839 Part Numbers by
NTMFS4839N Power MOSFET NTMFS4839N
ON Semiconductor
NTMFS4839N pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact