NTMFS4837N Datasheet PDF - ON Semiconductor

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NTMFS4837N
ON Semiconductor

Part Number NTMFS4837N
Description Power MOSFET
Page 6 Pages


NTMFS4837N datasheet pdf
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NTMFS4837N
Power MOSFET
30 V, 74 A, Single N−Channel, SO−8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
www.DataLShoewetS4iUd.ce oSmwitching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS 20 V
TA = 25°C
ID
16 A
TA = 85°C
11.5
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.2 W
10 A
7
0.88 W
74 A
53
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
47.2 W
148 A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
39 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 30 V, VGS = 10 V,
IL = 22 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
242 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
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V(BR)DSS
30 V
RDS(ON) MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
ID MAX
74 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
SD
S 4837N
S AYWWG
G GD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMFS4837NT1G SO−8 FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTMFS4837NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
1
Publication Order Number:
NTMFS4837N/D



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NTMFS4837N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
Value
2.65
56.75
142.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
www.DataZSehreoeGta4tUe.cVoomltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V;
ID = 15 A
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
25 mV/°C
1
10
±100
mA
nA
2.5 V
5.7 mV/°C
3.5 5.0
3.5
mW
5.9 7.5
5.9
15 S
2048
444
239
14.2
2.98
5.7
6.7
34.2
22
pF
nC
nC
14.2
55
ns
19
10
8.5
25.6
ns
25.2
9.2
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NTMFS4837N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.85 1.2
0.72
24
13
11
14
Source Inductance
LS
Drain Inductance
Gate Inductance
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Gate Resistance
LD
LG TA = 25°C
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.93
0.005
1.84
2.8
Unit
V
ns
nC
nH
W
100
90
80
70
60
50
40
30
20
10
0
0
VGS = 10 V to 4.5 V
TJ = 25°C
4V
3.8 V
3.6 V
3.4 V
3.2 V
1 2 34
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
100
90 VDS 10 V
80
70
60
50 TJ = −55°C
40 TJ = 25°C
30
TJ = 125°C
20
10
0
1 2 34 567
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
8
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3.0
T = 25°C
ID = 30 A
0.01
0.009 TJ = 25°C
0.008
0.007
VGS = 4.5 V
0.006
0.005
0.004
VGS = 11.5 V
0.003
0.002
0.001
4.0 5.0 6.0 7.0 8.0 9.0 10 11 11.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
10 20
30 40 50 60 70
ID, DRAIN CURRENT (A)
80 90
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current &
Gate Voltage
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NTMFS4837N
1.80
1.60
ID = 30 A
VGS = 10 V & 4.5 V
100000
10000
VGS = 0 V
TJ = 150°C
1.40
1.20
1000
100
TJ = 125°C
1.00 10
0.80
0.60
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
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Temperature
150
1
TJ = 25°C
0
5
10 15 20
25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current vs.
Voltage
3000
2000
CISS
TJ = 25°C
1000
0
10
COSS
CRSS
5 0 5 10 15 20
VGS VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
1000
VDD = 15 V
ID = 15 A
VGS = 11.5 V
100
td(off)
tr
10 tf
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
12
QT
10
8
6
4
Qgs
2
0
05
Qgd
VDD = 15.0 V
VGS = 11.5 V
ID = 30 A
TJ = 25°C
10 15 20 25 30
QG, TOTAL GATE CHARGE (nC)
35
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0.50 0.60 0.80
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
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