NTMFS4823N Datasheet PDF - ON Semiconductor


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NTMFS4823N
ON Semiconductor

Part Number NTMFS4823N
Description Power MOSFET
Page 6 Pages

NTMFS4823N datasheet pdf
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NTMFS4823N
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Power MOSFET
30 V, 30 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Device
Applications
Refer to Application Note AND8195/D
CPU Power Delivery
DCDC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±20
10.8
7.8
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
2.1 W
17.4 A
12.5
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
5.43 W
6.9 A
5.0
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
0.86 W
30 A
22
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
32.5 W
85 A
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
TA = 25°C
IDmaxpkg
TJ,
TSTG
IS
dV/dt
90
55 to
+150
32.5
6.0
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 24 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
28.8 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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V(BR)DSS
30 V
RDS(ON) MAX
10.5 mW @ 10 V
18.0 mW @ 4.5 V
ID MAX
30 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4823N
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMFS4823NT1G
Package
SO8FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4823NT3G SO8FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
January, 2010 Rev. 2
1
Publication Order Number:
NTMFS4823N/D



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NTMFS4823N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – Steady State (Note 2)
JunctiontoAmbient t v 10 sec
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
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Value
3.8
59.4
146
23
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
24 mV/°C
1.0
10
±100
mA
nA
1.9 2.5
V
5.1 mV/°C
9.2 10.6
9.1
15.6 18.0
mW
15.1
26 S
795
163
85
6.0 11
1.0
2.6
2.5
13
pF
nC
nC
10.8
29
12.7 ns
3.8
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NTMFS4823N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
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Min Typ Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
6.65
15.3
17.6 ns
3.0
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.95 1.2
0.8
7.9
5.8
2.1
0.6
1.3
0.005
1.84
1.0
3.0
V
ns
nC
nH
W
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NTMFS4823N
TYPICAL CHARACTERISTICS
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90
80 VGS = 10 V
7.0 V
70
6.5 V
60
6.0 V
50
40
5.5 V
TJ = 25°C
4.5 V
4.2 V
4.0 V
3.8 V
30 3.4 V
3.6 V
20 3.2 V
10 3.0 V
0 2.8 V
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
60
VDS 10 V
50
40
30
20
TJ = 25°C
10
0
TJ = 100°C
TJ = 55°C
0123 45
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.045
0.040
0.035
ID = 30 A
TJ = 25°C
0.030
0.025
0.020
0.015
0.010
0.005
0
2 3 4 5 6 7 8 9 10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
1.8
ID = 30 A
1.6 VGS = 10 V
1.4
0.022
0.020
0.018
0.016
TJ = 25°C
VGS = 4.5 V
0.014
0.012
0.010
VGS = 10 V
0.008
0.006
0.004
0.002
3 6 9 12 15 18 21 24 27 30
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1000
VGS = 0 V
TJ = 150°C
100
1.2 TJ = 100°C
1.0 10
0.8
0.6
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
1
5 10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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