NTD4808N Datasheet PDF - ON Semiconductor

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NTD4808N
ON Semiconductor

Part Number NTD4808N
Description Power MOSFET
Page 8 Pages


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NTD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
www.DataLShoewetS4iUd.ce oSmwitching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS 20 V
TA = 25°C
ID
12 A
TA = 85°C
9.5
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.0 W
9.8 A
7.5
1.3 W
63 A
49
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
54.6 W
126 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 30 V, VGS = 10 V,
IL = 17 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
TL
45
−55 to
+175
45
6
144.5
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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V(BR)DSS
30 V
RDS(ON) MAX
8.0 mW @ 10 V
12.4 mW @ 4.5 V
D
ID MAX
63 A
G
S
N−CHANNEL MOSFET
4
4
4
12
3
DPAK
CASE 369C
STYLE 2
1 23
1
2
3
3 IPAK
DPAK
(STRAIGHT LEAD) CASE 369D
CASE 369AC
STYLE 2
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4808N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 0
1
Publication Order Number:
NTD4808N/D



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NTD4808N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
2.75
3.5
73.5
116
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
www.DataDTSerhameinpe−ettr4oaU−tu.ScroeouCmrcoeefBfirceieanktdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 to 11.5 V ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 30 A,
RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
V
27 mV/°C
1
10
±100
mA
nA
2.5 V
5.6 mV/°C
6.7 8.0
6.6 mW
10.3 12.4
9.8
11.4 S
1538
334
180
11.3
1.6
4.9
4.9
26
13
pF
nC
nC
13
102
ns
11
5.6
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NTD4808N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 11.5 V, VDS = 15 V,
ID = 30 A, RG = 3.0 W
6.2
19.8
19.3
3.0
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
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Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.93 1.2
0.83
2.0
10.4
9.6
9.7
Source Inductance
LS
Drain Inductance, DPAK
LD
Drain Inductance, IPAK
LD TA = 25°C
Gate Inductance
LG
Gate Resistance
RG
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
2.49
0.0164
1.88
3.46
1.1
Unit
ns
V
ns
nC
nH
W
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NTD4808N
TYPICAL PERFORMANCE CURVES
100
90
5.5 V to 10 V
4.5 V
TJ = 25°C
80
70
60 4 V
50 3.8 V
40 3.6 V
30 3.4 V
20 3.2 V
10 3 V
0
012 34 5
www.DataSheet4U.cVoDmS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
80
VDS 10 V
70
60
50
40
30
20 TJ = 125°C
10 TJ = 25°C
0 TJ = −55°C
1234
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5
10
9.6
ID = 30 A
TJ = 25°C
9.2
8.8
8.4
8.0
7.6
7.2
6.8
6.4
6.0
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.020
0.018 TJ = 25°C
0.016
0.014
0.012
VGS = 4.5 V
0.010
0.008
0.006
0.004
VGS = 11.5 V
0.002
0
10 15 20 25 30 35 40 45 50 55 60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 30 A
1.6 VGS = 10 V
1.5
1.4
1.3
10000
1000
VGS = 0 V
100
TJ = 150°C
TJ = 125°C
1.2
1.1 10
1.0
0.9
0.8 1 TJ = 25°C
0.7
0.6 0.1
−50 −25 0 25 50 75 100 125 150 175
5
10
15
20 25 30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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