NSVJ3557SA3 Datasheet PDF - ON Semiconductor


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NSVJ3557SA3
ON Semiconductor

Part Number NSVJ3557SA3
Description N-Channel JFET
Page 5 Pages

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NSVJ3557SA3
N-Channel JFET
15V, 10 to 32mA, 35mS
Automotive JFET designed for compact and efficient designs and
including high gain performance. AEC-Q101 qualified JFET and PPAP
capable suitable for automotive applications.
Features
Large | yfs |
Small Ciss
This small package enables sets to be smaller and thinner
Ultralow noise figure
Pb-Free and RoHS compliance
AEC-Q101 qualified and PPAP capable
Typical Applications
AM Tuner RF Amplifier
Low Noise Amplifier
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSX
15 V
Gate-to-Drain Voltage
VGDS
15 V
Gate Current
IG 10 mA
Drain Current
ID 50 mA
Allowable Power Dissipation
PD
200 mW
Operating Junction and
Storage Temperature
TJ, TStg
55 to150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
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ELECTRICAL CONNECTION
N-Channel
3
1 : Source
2 : Drain
3 : Gate
12
3
1
2
SC-59 / CP3
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 0
1
Publication Order Number :
NSVJ3557A3/D



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NSVJ3557SA3
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
IG = 10A, VDS = 0V
VGS = 10V, VDS = 0V
VDS = 5V, ID = 100A
VDS = 5V, VGS = 0V
VDS = 5V, VGS = 0V, f = 1kHz
15
0.3
10
24
0.7
35
V
1 nA
1.5 V
32 mA
mS
Input Capacitance
Reverse Transfer Capacitance
Ciss
Crss
VDS = 5V, VGS = 0V, f = 1MHz
10 pF
2.9 pF
Noise Figure
NF VDS = 5V, Rg=1k, ID =1mA, f=1kHz
1 dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NSVJ3557SA3
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PACKAGE DIMENSIONS
unit : mm
NSVJ3557SA3
SC-59 / CP3
CASE 318BJ
ISSUE O
AD
3
3X L
E1 E
12
e
TOP VIEW
3X b
0.10 M C A
A
A2
A1
SIDE VIEW
C
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.80
3X
1.00
3.40
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
3X c
MILLIMETERS
DIM MIN MAX
A 0.95 1.35
A1 0.00 0.10
A2 0.20 0.40
b 0.35 0.50
c 0.10 0.20
D 2.75 3.05
E 2.30 2.70
E1 1.35 1.65
e 0.95 BSC
L 0.35 0.75
END VIEW
GENERIC
MARKING DIAGRAM
XXX M
1
XXX = Specific Device Code
M = Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4




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