NSS40200L Datasheet PDF - ON Semiconductor

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NSS40200L
ON Semiconductor

Part Number NSS40200L
Description PNP Transistor
Page 6 Pages


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NSS40200L, NSV40200L
40 V, 2.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
www.onsemi.com
−40 VOLTS
2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 7
1
VA M G
G
1
VA = Specific Device Code*
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
ORDERING INFORMATION
Device
Package
Shipping
NSS40200LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
NSV40200LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS40200L/D



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NSS40200L, NSV40200L
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
IBM
ESD
−40 Vdc
−40 Vdc
−7.0 Vdc
−2.0 A
−4.0 A
−300
mA
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Note 3)
710
mW
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
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NSS40200L, NSV40200L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −7.0 Vdc)
V(BR)CEO
−40
Vdc
V(BR)CBO
−40
Vdc
V(BR)EBO
−7.0
Vdc
ICBO
mAdc
− −0.1
IEBO
mAdc
− −0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
250
220
180
150
100
300
−0.010
−0.080
−0.135
−0.135
−0.017
−0.095
−0.170
−0.170
−0.900
−0.900
325
62
V
V
V
MHz
pF
pF
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td − − 60 ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr − − 120 ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts − − 400 ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf − − 130 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
5. Guaranteed by design but not tested.
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NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
0.25
IC/IB = 10
0.2
0.15
0.1
VCE(sat) = 150°C
25°C
−55°C
0.05
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
750
700
650 150°C (2.0 V)
600
550
500 25°C (5.0 V)
450
400 25°C (2.0 V)
350
300 −55°C (5.0 V)
250
200 −55°C (2.0 V)
150
100
0.001
0.01
150°C (5.0 V)
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
10
1.0
VCE = −2.0 V
0.9
−55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.1
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
10
0.35
IC/IB = 100
0.3
0.25
VCE(sat) = 150°C
−55°C
25°C
0.2
0.15
0.1
0.05
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7 25°C
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
10 mA
VCE (V) IC = 500 mA
0.8
100 mA
300 mA
0.6
0.4
0.2
0
0.01
0.1 1.0
10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
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