NRVTSA4100 Datasheet PDF - ON Semiconductor

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NRVTSA4100
ON Semiconductor

Part Number NRVTSA4100
Description Low Leakage Trench-based Schottky Rectifier
Page 5 Pages


NRVTSA4100 datasheet pdf
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NTSA4100, NRVTSA4100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRVTSA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
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SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMA
CASE 403D
STYLE 1
TH41
AYWWG
TH41
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTSA4100T3G
Package
SMA
(Pb−Free)
Shipping
5000 /
Tape & Reel
NRVTSA4100T3G SMA
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 2
1
Publication Order Number:
NTSA4100/D



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NTSA4100, NRVTSA4100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(TL = 118°C)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 110°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
IFRM
IFSM
4.0
8.0
50
A
A
A
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
Tstg −65 to +150 °C
TJ
−55 to +150
°C
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
Symbol
RθJL
RθJA
Typ
Max Unit
16.2 °C/W
90 °C/W
vF
0.43
V
0.59 0.66
(iF = 1.0 A, TJ = 125°C)
(iF = 4.0 A, TJ = 125°C)
0.35 −
0.53 0.58
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
1.3 25 mA
0.13 9 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
54.7
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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NTSA4100, NRVTSA4100
TYPICAL CHARACTERISTICS
100 100
TA = 150°C
10
TA = 125°C
TA = 85°C
1
TA = 25°C
0.1
0
TA = −55°C
0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.E−01
TA = 150°C
10 TA = 125°C
TA = 85°C
1
TA = 25°C
0.1
1.0 0
TA = −55°C
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1.E−02
1.E−03
1.E−04
1.E−05
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1.E−07
1.E−06
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
8
7
DC
6
5 Square Wave
4
3
2
1 RqJL = 16.2°C/W
0
0 20 40 60 80 100 120
TC, LEAD TEMPERATURE (°C)
Figure 6. Current Derating
140
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NTSA4100, NRVTSA4100
TYPICAL CHARACTERISTICS
8
IPK/IAV
7 = 20
6
IPK/IAV = 10
IPK/IAV = 5
5
4 Square Wave
3
DC
2
1
0
0123 45
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
1000
100 50% Duty Cycle
20%
10%
10 5%
2%
1 1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
100
1000
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