NE5550979A Datasheet PDF - Renesas

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NE5550979A
Renesas

Part Number NE5550979A
Description Silicon Power LDMOS FET
Page 13 Pages


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NE5550979A
Silicon Power LDMOS FET
Data Sheet
R09DS0031EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
: GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
High ESD tolerance
: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550979A
Order Number
NE5550979A-A
Package
79A
(Pb Free)
Marking
W6
Supplying Form
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550979A-T1 NE5550979A-T1-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550979A-T1A NE5550979A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550979A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
Ptot
Tch
Tstg
Ratings
30
6.0
3.0
25
150
55 to +150
Unit
V
V
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 11
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NE5550979A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
1.7
25
MAX.
9.0
2.85
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Note 1 : Pin = 10 dBm
Note 2 : Pin = 5 dBm
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
GL Note 1
Pout
IDS
ηd
ηadd
GL Note 2
Pout
IDS
ηd
ηadd
GL Note 1
Test Conditions
VGS = 6.0 V
VDS = 25 V
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 700±100 mA
Channel to Case
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 200 mA (RF OFF)
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
IDset = 200 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 200 mA (RF OFF)
MIN.
1.15
25
1.8
38.5
TYP. MAX.
100
10
1.65 2.25
37
2.2 2.9
5.0
39.5
1.70
68
66
22.0
39.6
1.60
75
73
25.0
38.6
1.76
55
52
16.0
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 11
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NE5550979A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
IN
50 Ω C10
C11
C12
R1 C1 L1 C1
FET
NE5550979A (WS)
C20
OUT
C22 50 Ω
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
C12
C20
C21
C22
R1
L1
<R> PCB
SMA Connecter
Value
1μF
100 pF
24 pF
2.4 pF
27 pF
1.8 pF
100 pF
4.7 kΩ
123 nH
Type
GRM31CR72A105KA01B
GRM1882C1H101JA01
ATC100A240JW
ATC100A2R4BW
ATC100A270JW
ATC100A1R8BW
ATC100A101JW
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.5 mm, φ D = 3 mm, 10 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Maker
Murata
Murata
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
SSM
Ohesangyou
Panasonic
WAKA
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
VGS
GND
VDS
C1
C12
C11
C10
R1
C1
L1
C20 C21
C22
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 3 of 11
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NE5550979A
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
R: f = 460MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200mA, Pout (2 tone) = 12 to 38 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
50 Pout - 3.6 V
Pout - 4.5 V
45
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
40
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
35
IDS - 7.5 V
IDS - 9 V
5.0
4.5
4.0
3.5
30 3.0
25 2.5
20 2.0
15 1.5
10 1.0
5 0.5
0
–5 0
0.0
5 10 15 20 25 30 35
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
35 Gp - 7.5 V
Gp - 9 V
ηadd - 3.6 V
30 ηadd - 4.5 V
ηadd - 6.0 V
ηadd - 7.5 V
25 ηadd - 9 V
80
70
60
50
20 40
15 30
10 20
5 10
0
–5 0
0
5 10 15 20 25 30 35
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 6.0 V
–10 2f0 - 7.5 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 6.0 V
–20 3f0 - 7.5 V
2f0 - 9 V
3f0 - 9 V
–30
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 6 V
–10 IM3 - 7.5 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 6.0 V
–20 IM5 - 7.5 V
IM3 - 9 V
IM5 - 9 V
–30
–40 –40
–50 –50
–60 –60
–70
10 15 20 25 30 35 40 45
Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
–70
10 15 20 25 30 35 40
2 Tones Output Power Pout (2 tone) (dBm)
Page 4 of 11
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NE5550979A Silicon Power LDMOS FET NE5550979A
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NE5550979A pdf

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