NE5550979A Datasheet PDF - Renesas

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NE5550979A
Renesas

Part Number NE5550979A
Description Silicon Power LDMOS FET
Page 13 Pages


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NE5550979A
Silicon Power LDMOS FET
Data Sheet
R09DS0031EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
: GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
High ESD tolerance
: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550979A
Order Number
NE5550979A-A
Package
79A
(Pb Free)
Marking
W6
Supplying Form
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550979A-T1 NE5550979A-T1-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550979A-T1A NE5550979A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550979A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
Ptot
Tch
Tstg
Ratings
30
6.0
3.0
25
150
55 to +150
Unit
V
V
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 11
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