NE5550779A Datasheet PDF - Renesas

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NE5550779A
Renesas

Part Number NE5550779A
Description Silicon Power LDMOS FET
Page 17 Pages


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NE5550779A
Silicon Power LDMOS FET
Data Sheet
R09DS0040EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
: GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550779A
Order Number
NE5550779A-A
Package
79A
(Pb-Free)
Marking
W8
Supplying Form
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550779A-T1 NE5550779A-T1-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550779A-T1A NE5550779A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550779A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
2.1
4.2
17.8
150
55 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 15
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NE5550779A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
1.4
25
MAX.
9.0
2.85
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IGSS VGS = 6.0 V
IDSS
VDS = 25 V
− − 100
− − 10
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Vth
BVDSS
Gm
Rth
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 490±70 mA
Channel to Case
1.15 1.65 2.25
25 38
1.26 1.54 2.03
7.0
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Load VSWR Tolerance
Pout
IDS
ηd
ηadd
GL Note 1
Note 2
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 140 mA (RF OFF)
f = 460 MHz, VDS = 9.0 V,
Pin = 25 dBm,
IDset = 140 mA (RF OFF)
Load VSWR=20:1(All Phase)
37.0 38.5
1.38
68
66
22.0
No Destroy
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Pout
IDS
ηd
ηadd
GL Note 3
Pout
IDS
ηd
ηadd
GL Note 4
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
IDset = 140 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 140 mA (RF OFF)
38.5
1.36
69
67
24.0
37.4
1.26
58
53
17.0
Notes: 1. Pin = 10 dBm
2. These characteristics values are measurement using measurement tools especially by RENESAS.
3. Pin = 5 dBm
4. Pin = 10 dBm
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
A wafer rejection criterion for standard devices is 1 reject for several samples.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 15
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NE5550779A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
IN
50 Ω
C10
C11
C12
L2
C13
R1 C1
L1 C1
NE5550779A
C20
C22
L3
OUT
50 Ω
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
C12
C13
C20
C21
C22
R1
<R>
L1
L2
L3
PCB
SMA Connecter
Value
1 μF
27 pF
2.7 pF
12 pF
12 pF
24 pF
6.8 pF
100 pF
2 kΩ
114 nH
4.7 nH
3.0 nH
Type
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WAKA 01K0790-20
Maker
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American Technical
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R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 3 of 15
Free Datasheet http://www.datasheet4u.com/



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NE5550779A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
VGS
VDS
RF IN
C1
C11
C12
C13
R1
L2
C10
C1
L1
C20 RF OUT
C21
L3
C22
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 4 of 15
Free Datasheet http://www.datasheet4u.com/



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