NE5550279A Datasheet PDF - Renesas

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NE5550279A
Renesas

Part Number NE5550279A
Description Silicon Power LDMOS FET
Page 9 Pages


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NE5550279A
Silicon Power LDMOS FET
Data Sheet
R09DS0033EJ0100
Rev.1.00
Mar 28, 2012
FEATURES
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550279A
Order Number
NE5550279A-A
Package
79A
(Pb Free)
Marking
W7
Supplying Form
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550279A-T1 NE5550279A-T1-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550279A-T1A NE5550279A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550279A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
0.6
1.2
6.25
150
55 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
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NE5550279A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
0.4
15
MAX.
9.0
2.85
20
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Note: Pin = 0 dBm
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
GL Note
Test Conditions
VGS = 6.0 V
VDS = 25 V
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 100±100 mA
Channel to Case
f = 460 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
MIN.
1.15
25
1.8
31.5
TYP. MAX.
100
10
1.65 2.25
38
2.2 2.9
20.0
33.0
0.38
70
68
22.5
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
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NE5550279A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
IN
50 Ω
C10
C11 C12
L2
C13
R1 C1
L3
C14
FET
NE5550279A
L1 C1
L4
C20
C22
C21
OUT
50 Ω
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
C12
C13
C14
C20
C21
C22
R1
L1
L2
L3
L4
PCB
SMA Connecter
Value
1 μF
22 pF
1.2 pF
4.7 pF
15 pF
12 pF
10 pF
3.9 pF
100 pF
2 kΩ
123 nH
10 nH
9.8 nH
20 nH
Type
GRM188B31C105KA92
GRM1882C1H220JA01
ATC100A1R2JW
ATC100A4R7BW
ATC100A150BW
ATC100A120BW
ATC100A100JW
ATC100A3R9BW
ATC100A101JW
1/10 W Chip Resistor
RK73B1JTTD202J
φ 0.5 mm, φ D = 3 mm, 10 Turns
LQW18AN10NG00
φ 0.4 mm, φ D = 1.6 mm, 3 Turns
φ 0.5 mm, φ D = 3 mm, 2 Turns
R4775, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Maker
Murata
Murata
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
KOA
Ohesangyou
Murata
Ohesangyou
Ohesangyou
Panasonic
WAKA
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
C1
C12 L2
C10
C13
C14
R1
C11 L3
C1
L1
C21
C20
L4
C22
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
Page 3 of 7
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NE5550279A
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
R: f = 460 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = 10 to 20 dBm
IM: f1 = 460 MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pout (2 tone) = 8 to 32 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
40
Pout - 3.6 V
Pout - 4.5 V
35 Pout - 6.0 V
Pout - 7.5 V
Pout - 9.0 V
30 IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
25 IDS - 7.5 V
IDS - 9.0 V
1
0.9
0.8
0.7
20 0.6
15 0.5
10 0.4
5 0.3
0 0.2
–5 0.1
–10 0
–15 –10 –5 0 5 10 15 20 25
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
Gp - 3.6 V
Gp - 4.5 V
Gp - 6.0 V
35 Gp - 7.5 V
Gp - 9.0 V
D add - 3.6 V
30
D add - 4.5 V
D add - 6.0 V
D add - 7.5 V
D add - 9.0 V
25
80
70
60
50
20 40
15 30
10 20
5 10
00
–15 –10 –5 0 5 10 15 20 25
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 6.0 V
–10 2f0 - 7.5 V
2f0 - 9.0 V
–20
–30
–40
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 6.0 V
–50 3f0 - 7.5 V
3f0 - 9.0 V
–60
–70
5
10 15 20 25 30 35
Output Power Pout (dBm)
40
Remark The graphs indicate nominal characteristics.
R09DS0033EJ0100 Rev.1.00
Mar 28, 2012
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 6.0 V
–10 IM3 - 7.5 V
IM3 - 9.0 V
IM5 - 3.6 V
IM5 - 4.5 V
–20 IM5 - 6.0 V
IM5 - 7.5 V
IM5 - 9.0 V
–30
–40
–50
–60
–70
5
10 15 20 25 30 35
2 Tones Output Power Pout (2 tone) (dBm)
Page 4 of 7
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