NE5550234 Datasheet PDF - Renesas

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NE5550234
Renesas

Part Number NE5550234
Description Silicon Power MOS FET
Page 16 Pages


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NE5550234
Silicon Power MOS FET
Data Sheet
R09DS0039EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550234
NE5550234-T1
NE5550234-AZ
NE5550234-T1-AZ
3-pin
power
minimold
(34 PKG)
(Pb-Free)
V5 12 mm wide embossed taping
Gate pin faces the perforation side of the tape
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
0.6
1.2
12.5
150
65 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 14
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NE5550234 Silicon Power MOS FET NE5550234
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NE5550234 pdf

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