NE5550234 Datasheet PDF - Renesas

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NE5550234
Renesas

Part Number NE5550234
Description Silicon Power MOS FET
Page 16 Pages


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NE5550234
Silicon Power MOS FET
Data Sheet
R09DS0039EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550234
NE5550234-T1
NE5550234-AZ
NE5550234-T1-AZ
3-pin
power
minimold
(34 PKG)
(Pb-Free)
V5 12 mm wide embossed taping
Gate pin faces the perforation side of the tape
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
0.6
1.2
12.5
150
65 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 14
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NE5550234
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
0.38
15
MAX.
9.0
2.85
20
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IGSS VGS = 6.0 V
IDSS
VDS = 25 V
− − 100
− − 10
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Vth
BVDSS
Gm
Rth
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 140±20 mA
Channel to Case
1.15 1.65 2.25
25 38
0.44
10.0
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Load VSWR Tolerance
Pout
IDS
ηd
ηadd
GL Note 1
Note 2
f = 460 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
f = 460 MHz, VDS = 9.0 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
Load VSWR=20:1(All Phase)
31.5 33.0
0.38
70
68
23.5
No Destroy
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Pout
IDS
ηd
ηadd
GL Note 3
Pout
IDS
ηd
ηadd
GL Note 4
f = 157 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 17 dBm,
IDset = 40 mA (RF OFF)
33.0
0.36
74
73
25.8
32.2
0.35
62
60
18.3
Notes: 1. Pin = 0 dBm
2. These characteristics values are measurement using measurement tools especially by RENESAS.
3. Pin = 5 dBm
4. Pin = 7 dBm
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
The wafer rejection criterion for standard devices is 1 reject for several samples.
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 14
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NE5550234
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
IN
50 Ω C10
C11
L10
C12
L11
R1 C1 L1 C1
NE5550234
L20
C20
C22
C21
OUT
50 Ω
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
C12
C20
C21
C22
R1
L1
L10, L11
L20
<R> PCB
SMA Connecter
Value
1 μF
27 pF
3.9 pF
18 pF
12 pF
1.5 pF
100 pF
4.7 kΩ
47.2 nH
12 nH
7.8 nH
Type
GRM31MR71H105KA88L
GRM1882C1H270JA01
GRM1882C1H3R9CZ01
GRM1882C1H180JA01
GRM1882C1H120JA01
GRM1882C1H1R5CZ01
GRM2162C1H101JA01D
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.4 mm, φ D = 2 mm, 7 Turns
LL1608-FS12NJ
φ 0.4 mm, φ D = 1.4 mm, 3 Turns
R1766, t = 0.8 mm, εr = 4.8, size = 30 × 40 mm
WAKA 01K0790-20
Maker
Murata
Murata
Murata
Murata
Murata
Murata
Murata
SSM
Ohesangyou
TOKO
Ohesangyou
Panasonic
WAKA
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
VGS
VDS
C1 C1
IN
R1
C10
L1 C22
C11
L10 L11
C12
L20 C20 C21
OUT
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 3 of 14
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NE5550234
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
RF: f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –15 to 20 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40mA, Pout (2 tone) = 6 to 28 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
40 Pout - 3.6 V
Pout - 4.5 V
Pout - 7.5 V
35 Pout - 9 V
Pout - 6 V
IDS - 3.6 V
IDS - 4.5 V
30 IDS - 7.5 V
IDS - 9 V
IDS - 6 V
0.8
0.7
0.6
25 0.5
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
Gp - 3.6 V
Gp - 4.5 V
Gp - 7.5 V
35 Gp - 9 V
Gp - 6 V
η add - 3.6 V
30 η add - 4.5 V
η add - 7.5 V
η add - 9 V
η add - 6 V
25
80
70
60
50
20 0.4 20 40
15 0.3 15 30
10 0.2 10 20
5 0.1 5 10
0 0.0
–20 –15 –10 –5 0 5 10 15 20 25
Input Power Pin (dBm)
0
–20 –15 –10 –5
0
5 10 15 20 25 0
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 7.5 V
–10 2f0 - 9 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 7.5V
–20 3f0 - 9 V
2f0 - 6 V
3f0 - 6 V
–30
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 7.5 V
–10 IM3 - 9 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 7.5 V
–20 IM5 - 9 V
IM3 - 6 V
IM5 - 6 V
–30
–40 –40
–50 –50
–60 –60
–70
0
5 10 15 20 25 30 35 40
Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
–70
0
5 10 15 20 25 30
2 Tones Output Power Pout (2 tone) (dBm)
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 4 of 14
Free Datasheet http://www.datasheet4u.com/



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NE5550234 Silicon Power MOS FET NE5550234
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NE5550234 pdf

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